Simulation of the Bosch process for micro- and nanostructures

Mukhamadeev, R. A.; Danilina, T. I.; Troyan, P. E.

doi:10.1134/s1063739715070124

Cited by 3 publications

(1 citation statement)

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“…The fabrication of MEMS usually involves series of operations on substrate including Lithographie, Galvanoformung, Abformung (LIGA), lithography, deposition, etch and so on. inductively coupled plasma deep reactive ion etch (ICP-DRIE), is a typical Bosch process for fabricating high aspect ratio structures in silicon wafers [4][5][6]. The process consists of repeated steps of passivation and etching.…”

Section: Introductionmentioning

confidence: 99%

Improvement on the uniformity of deep reactive ion etch for electrically isolated silicon-based substrates

Hu¹,

Zhen²,

Sun³

et al. 2022

J. Micromech. Microeng.

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Substrate-free MEMS devices are becoming the hotspots for microsystems. The fabrication of substrate-free MEMS devices usually involves the release of backside silicon by the Inductively Coupled Plasma Deep Reactive Ion Etch (ICP-DRIE) process. However, when using DRIE to etch electrically isolated samples, significant non-uniformity in the etch profile were often observed. Compared to grounded silicon samples, the electrically isolated counterparts after DRIE showed a faster etch rate at the edge and a slower one in the centre. This phenomenon is believed to be caused by the interaction between the deflection of charge-bearing ions entering the aperture region and the accumulated charges on the sidewall during DRIE. Simulation results with ICP showed that the electric field and ion distribution can be affected in electrically isolated substrates. After the isolated samples were electrically grounded, the charge accumulation on the sidewall was reduced and 12% etch uniformity was obtained. This technique helps in the fabrication of substrate-free MEMS devices.

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Section: Introductionmentioning

confidence: 99%