Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

Obolensky, S. V.; Murel, A. V.; Vostokov, N. V.; Shashkin, V. I.

doi:10.1109/ted.2011.2156410

Cited by 13 publications

(4 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This result is obtained by assuming that the dielectric constant of the native insulating film on the semiconductor surface does not depend on the electric field [32,33]. For a Mott-type barrier diode the thermionic emissiondiffusion theory predicts that the current density across of a metal-semiconductor interface at the assuming that the native thin insulating film is fully depleted is given by [35][36][37][38][39][40]:…”

Section: Theoretical Background and Considerationsmentioning

confidence: 99%

Mott barrier behavior of metal–TlGaSe₂ layered semiconductor junction

Kandemir

Gören

Erdem

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We report on the characteristics of metal-p-type high resistance TlGaSe2 semiconductor junction barrier fabricated by deposition of indium and gold metals. The electrical properties of /TlGaSe2/ semiconductor contacts were monitored as a function of temperature in the range of ∼80–300 K using current–voltage ( I − V ) and capacitance–voltage ( C − V ) measurements. Device characteristics of I n /TlGaSe2/ A u showed rectification properties. From forward bias I − V characteristics it was revealed that the increase of current is slower than the predictions by Schottky barrier theory. The rectification properties of I n /TlGaSe2/ A u semiconductor device were simulated by the Mott barrier model where the presence of an undoped layer on the semiconductor surface is assumed, and measurements and computational simulation agreed on the validity of this model. C − V measurements showed that at higher temperatures I n /TlGaSe2/ A u barrier showed a capacitance from accumulation toward depletion mode, whereas at low temperatures the barrier capacitance degradation was found. The observed C − V of I n /TlGaSe2/ A u does not significantly change over the entire bias range ± 30 V, confirming that the I n /TlGaSe2/ A u is fully depleted, thus the structures are Mott barrier. First-principles electronic band diagram calculations showed that introduction of S e -atom vacancies in the various sites of TlGaSe2 unit cell greatly affects the electronic band structure of this semiconductor in an increasing manner in band gaps with respect to stoichiometric compound. Consequently, the S e - vacancies localized inside the thin surface layer of TlGaSe2 are responsible for high average surface electrical resistivity of the material and could be proposed as a physical basis for the existence of native insulator layer on TlGaSe2 surface. Thus we propose a model for TlGaSe2 crystal which is comprised from an electrically conducting bulk semiconductor sandwiched between two high resistivity thin surface sheets. We suggest that the selenium vacancy defects on the surface of TlGaSe2 layered semiconductor are also responsible for the memristive behavior of this compound.

show abstract

Section: Theoretical Background and Considerationsmentioning

confidence: 99%

Mott barrier behavior of metal–TlGaSe₂ layered semiconductor junction

Kandemir

Gören

Erdem

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Для расчетов транспорта электронов совместно использовались одночастичный метод Монте-Карло и квазигидродинамическая модель [7][8][9].…”

Section: обсуждение результатов экспериментаunclassified

Сравнение особенностей транспорта электронов и субтетрагерцовой генерации в диодах на основе 6-, 18-, 30-, 70- и 120-периодных сверхрешеток GaAs/AlAs

Оболенская¹,

Ivanov²,

Pavel'ev³

et al. 2019

Физика И Техника Полупроводников

View full text Add to dashboard Cite

A comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage drop across one superlattice period is determined for all special points in the current–voltage characteristics of the diodes. The mechanism of the appearance of stable current oscillations in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a high doping level is investigated.

show abstract

“…Для расчетов транспорта электронов совместно использовался одночастичный метод Монте-Карло и квазигидродинамическая модель [10]. Величины падающего напряжения и напряженности поля в сверхрешетке определялись на основе квазигидродинамической модели так, как это описано в [1] С целью анализа характера движения электронов в СР был проведен расчет доли баллистических, квазибаллистических и отраженных электронов для разных напряженностей электрического поля и положений мини-зоны в СР (табл.…”

Section: математическая модельunclassified

Моделирование транспорта электронов в малопериодных GaAs/AlAs сверхрешетках для терагерцового диапазона частот

Pavel'ev¹,

Васильев²,

Козлов³

et al. 2016

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Методом Монте-Карло рассчитан транспорт электронов в сверхрешетках на основе гетероструктур GaAs/AlAs с небольшим числом периодов (6 периодов). Эти сверхрешетки используются в диодах, работающих в качестве гармонических смесителей для стабилизации частоты квантовых каскадных лазеров до 5 ТГц. Рассмотрена зонная структура сверхрешеток с различным количеством монослоев AlAs и проведен расчет вольт-амперных характеристик. Проведено сравнение рассчитанных вольт-амперных характеристик сверхрешеток с экспериментом. Теоретически и экспериментально установлена возможность эффективного применения таких сверхрешеток в терагерцовом диапазоне частот.

show abstract

Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

Cited by 13 publications

References 18 publications

Mott barrier behavior of metal–TlGaSe₂ layered semiconductor junction

Mott barrier behavior of metal–TlGaSe₂ layered semiconductor junction

Сравнение особенностей транспорта электронов и субтетрагерцовой генерации в диодах на основе 6-, 18-, 30-, 70- и 120-периодных сверхрешеток GaAs/AlAs

Моделирование транспорта электронов в малопериодных GaAs/AlAs сверхрешетках для терагерцового диапазона частот

Contact Info

Product

Resources

About

Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

Cited by 13 publications

References 18 publications

Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction

Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction

Сравнение особенностей транспорта электронов и субтетрагерцовой генерации в диодах на основе 6-, 18-, 30-, 70- и 120-периодных сверхрешеток GaAs/AlAs

Моделирование транспорта электронов в малопериодных GaAs/AlAs сверхрешетках для терагерцового диапазона частот

Contact Info

Product

Resources

About

Mott barrier behavior of metal–TlGaSe₂ layered semiconductor junction

Mott barrier behavior of metal–TlGaSe₂ layered semiconductor junction