Simulation of the influence of impact ionization process on the current noise in deep submicron silicon diode

Abstract

Ensemble Monte Carlo simulation has been used to simulate charge carrier transport in the deep submicron silicon diode with n+-n-n+ structure. The influence of impact ionization process on static current-voltage characteristics as well as current noise has been studied. MO.QEln1POBAH�E BIl�flH�fI npOUECCA Y.QAPHO� �OH�3AU�� HA WYM TOKA B rIlY60KOCY6M�KPOHHOM KPEMH�EBOM .Q�O.QE