Ensemble Monte Carlo simulation has been used to simulate charge carrier transport in the deep submicron silicon diode with n+-n-n+ structure. The influence of impact ionization process on static current-voltage characteristics as well as current noise has been studied. MO.QEln1POBAH�E BIl�flH�fI npOUECCA Y.QAPHO� �OH�3AU�� HA WYM TOKA B rIlY60KOCY6M�KPOHHOM KPEMH�EBOM .Q�O.QE

vThe possibilities and methods of creating a stable defective structure, including dislocation structure near the zones of p–n-transitions of silicon diodes of noise generators on plates with crystallographic orientations (111) and (001) have been investigated. The effective distribution control of uncontrolled impurities in monocrystalline silicon is achieved by forming a stable dislocation structure in its volume. In order to obtain the reproducible characteristics of noise generator diodes, it is necessary that the dislocation density be homogeneous throughout the plate area. Since the density of dislocations is slightly lower at the edge of the dislocation trail than in the middle, this means that the dislocation traces formed by the adjacent melting zones with the help of a laser beam should overlap. On the basis of experimental studies, it has been established that the necessary degree of uniformity of the density of defects generated is achieved by compliance with the condition of a = (1.5–5.0)d, where a is a step, d is a width of the laser spot on the wafer. The melting process was carried out in a nitrogen environment using a laser hettering unit. The real width of the melting zone turns out to be slightly larger than the diameter of the laser spot due to the thermal conductivity of the silicon and is about 10 μm. Increased dislocation generation on the Si3N4 inclusions, as opposed to dislocations on the Si–SiO2 border, leads to an additional expansion of the dislocation track at the work surface of the plate of noise diodes. The presence of the stable dislocation structure, as well as the presence of impurities and secondary metal atoms in the noise diodes ND 103L structure are confirmed by the secondary ion mass spectroscopy (SIMS) method. The results of the study have been tested at Corporation “INTEGRAL” (Belarus) and can be used in the manufacture of silicon noise diodes.

Stabilization of residual point defects at the finishing stages of noise diodes can be ensured by the selection of appropriate ignition modes and the environment of its conduct. The method and technology of reducing the concentration of point defects in the structure of p-n-transition, taking into account the content of impurities of secondary metals, oxygen and nitrogen is proposed. It has been established that the burning of readymade structures and diodes of noise generators in nitrogen environments at temperatures of 450…600 °С for (80 ± 3) min leads to an increase in spectral noise density and a significant (twice) reduction of its unevenness. The most important result of this burn is a reduction in the spread of the average values of the noise parameters studied: by 61.2 % in effective noise voltage; spectral density by 34.2 %; at the boundary frequency of the signal by 34.9 %; in non-linear density by 25.9 %. This improves the quality of random numerical sequences in information protection software systems.