Simulation of the Influence of Non - Gaussian Noise During Measurement

Kuzmych, Lyudmyla; Volk, Liubov; Kuzmych, Anna; Kuzmych, Stepan; Voropay, G. V.; Polishchuk, V.N.

doi:10.1109/elnano54667.2022.9927008

Cited by 20 publications

(4 citation statements)

References 8 publications

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“…The moment of separation of the dislocation segments from the stoppers can be determined by measuring the amplitude dependence of IF Q −1 (ε). To determine the variations in anharmonic effects, it is necessary to select high-fidelity measurement methods because these changes are small [8][9][10][11][12][13][14][15][16]. To set the spectrum of structural defects in the analysis of positions IF maximums -Q , M 1 the duration of relaxation time τ and their deposit in the attenuation of elastic vibrations can be used as a non-destructive IF method.…”

Section: Introductionmentioning

confidence: 99%

Indicatory surface of anelastic-elastic properties of Ti alloys

Onanko,

Kuzmych,

Onanko

et al. 2023

Mater. Res. Express

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The simultaneous influence of hydrogen H and ultrasound deformation on internal friction Q −1 and dynamic elastic modulus E of intermetallic Ti3Al alloy after cutting and polishing were studied. The relaxation maximum of internal friction Q −1 M1 at temperature Т М1 ≈ 398 К, conditioned by the mechanism caused by reorientation interstitial atoms in dumbbell configurations H-H was discovered. Internal friction maximum Q −1 M2 in intermetallic Ti3Al at temperature T M2 ≈ 439 K was discovered with an activation energy H 2 = 0.86±0.1 eV. 2D and 3D atomic force microscopy microstructure images of Ti (VT8) alloy after mechanical and thermal treatment are presented. Strengthening of Ti alloys is related to the cooperation of dislocations with point defects.

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Section: Introductionmentioning

confidence: 99%

Indicatory surface of anelastic-elastic properties of Ti alloys

Onanko,

Kuzmych,

Onanko

et al. 2023

Mater. Res. Express

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“…A. Onanko a , D. V. Charnyi b , A. P. Onanko c , E. M. Matseliuk a , O. P. Dmytrenko c , M. P. Kulish c , T. M. Pinchuk-Rugal c , P. P. Ilyin c , and A. A. Kuzmych d elastic aftereffect, elastic hysteresis σ-ε, creep -deformation ε(t) at constant stress σ 0 , and stress relaxation σ(t) at constant deformation ε 0 (5,6).…”

Section: Introductionmentioning

confidence: 99%

(Digital Presentation) Internal Friction, Mechanical Spectroscopy in SiO2/Si Wafers

Onanko¹,

Charnyi²,

Онанко³

et al. 2023

ECS Trans.

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In this work, after X-ray and electron irradiation, the outcomes of the evaluation dynamic characteristics of interstitial atoms Sij , vacancy V, and O-complexes were evaluated to account for the annealing conditions to derive specific structural defects in the SiO2/Si wafer. A non-destructive method, which allows the determination of the internal friction difference ΔQ-1/Q-1 0 of the elastic vibration structure defect density Nd and the depth of the broken layer hb , is offered for the SiO2/Si wafer. The method was developed, the installation was designed and manufactured for the excitation and registration of damped bending resonant oscillations in a SiO2/Si disc-shaped wafer with a thickness hSiO2 ≈ 100 nm, his = 300÷500×103 nm, and diameter D = 60÷100×10-3 m to measure the structurally sensitive internal friction Q-1 . Measurement of the internal friction background Q-1 0 at harmonic frequencies f0 and f2 allowed us to experimentally determine the nodal lines of the oscillating disks.

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“…Because Si is the main semiconductor substrate material in various microelectronic products, it is necessary to study the dynamics of the defects in the crystal structure of Si during irradiation. [4][5][6][7] Among the methods for studying structural defects in these crystals, the structure-sensitive IF method is promising, making it possible to study dislocation dynamics. [8][9][10] A structurally sensitive mechanical relaxation IF method was used to study the presence and dynamics of the structural defects.…”

mentioning

confidence: 99%

Anelastic Internal Friction and Mechanical Spectroscopy of SiO₂/Si Wafers

Onanko,

Kuzmych,

Onanko

et al. 2024

ECS J. Solid State Sci. Technol.

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In this work, after electron irradiation and X-ray, the outcomes of the evaluation dynamic characteristics of interstitial atoms Sij , vacancy V, and O-complexes were evaluated to account for the annealing conditions to derive specific structural defects in the SiO2/Si wafer. A non-destructive method, which allows the determination of the internal friction difference ΔQ-1/Q-1 0 of the elastic vibration of structural defects of dislocations with density ND and the depth of the broken layer hb , is offered for the SiO2/Si wafer. The method was developed, the installation was designed and manufactured for the excitation and registration of damped bending resonant oscillations in a SiO2/Si disc-shaped wafer with a thickness hSiO2 ≈ 100 nm, his = 300÷500×103 nm, and diameter D = 60÷100×10-3 m to measure the structurally sensitive internal friction Q-1 in vacuum P ≈ 10-2 Pa. Measurement of the internal friction background Q-1 0 at harmonic frequencies f0 and f2 allowed us to experimentally determine the nodal lines of the oscillating disks.

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Simulation of the Influence of Non - Gaussian Noise During Measurement

Cited by 20 publications

References 8 publications

Indicatory surface of anelastic-elastic properties of Ti alloys

Indicatory surface of anelastic-elastic properties of Ti alloys

(Digital Presentation) Internal Friction, Mechanical Spectroscopy in SiO2/Si Wafers

Anelastic Internal Friction and Mechanical Spectroscopy of SiO₂/Si Wafers

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Simulation of the Influence of Non - Gaussian Noise During Measurement

Cited by 20 publications

References 8 publications

Indicatory surface of anelastic-elastic properties of Ti alloys

Indicatory surface of anelastic-elastic properties of Ti alloys

(Digital Presentation) Internal Friction, Mechanical Spectroscopy in SiO2/Si Wafers

Anelastic Internal Friction and Mechanical Spectroscopy of SiO2/Si Wafers

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Anelastic Internal Friction and Mechanical Spectroscopy of SiO₂/Si Wafers