In this work, after electron irradiation and X-ray, the outcomes of the evaluation dynamic characteristics of interstitial atoms Sij
, vacancy V, and O-complexes were evaluated to account for the annealing conditions to derive specific structural defects in the SiO2/Si wafer. A non-destructive method, which allows the determination of the internal friction difference ΔQ-1/Q-1
0
of the elastic vibration of structural defects of dislocations with density ND
and the depth of the broken layer hb
, is offered for the SiO2/Si wafer. The method was developed, the installation was designed and manufactured for the excitation and registration of damped bending resonant oscillations in a SiO2/Si disc-shaped wafer with a thickness hSiO2
≈ 100 nm, his
= 300÷500×103 nm, and diameter D = 60÷100×10-3 m to measure the structurally sensitive internal friction Q-1
in vacuum P ≈ 10-2 Pa. Measurement of the internal friction background Q-1
0
at harmonic frequencies f0
and f2
allowed us to experimentally determine the nodal lines of the oscillating disks.