Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

“…[4]) by chemical vapor deposition (CVD). Horizontal [7] and vertical cold-wall [8][9][10], chimney [11], horizontal hot-wall [12][13][14][15][16][17][18] and planetary reactors [19] can be used. More recently, chimney-type reactors working at high temperature (>2000 K) with hot-walls were developed to increase the growth rate to 25-100 mm/h [11,20,21].…”

Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

“…The experimental reactor from the Epigress Company (http://www.epigress.com) described elsewhere [16,44] is schematically shown on figure 8. Silane and propane for SiC growth, nitrogen and TMA for doping, diluted in hydrogen, are used.…”

“…First, simulations involving electromagnetic, heat and mass transfer [12][13][14][15][16] were performed on this hot wall reactor to quantify the complex temperature distribution. The CFDACE software package (http://www.cfdrc.com) and a series of user subroutines was used.…”

“…The rectangular shape of the susceptor, heated by induction, associated with the cylindrical shape of the insulation leads to a 3D situation. Second, mass transport simulations [12][13][14][15][16]45] were performed to understand the history of growth rate and doping. The most complete and reliable heterogeneous and homogeneous kinetic database published was analysed [46][47][48][49][50] because numerous experiments support the validity of this database in the 1700-2000 K temperature range and 25-100 kPa pressure range.…”

“…High quality homoepitaxial growth (3-10 µm h −1 ) at around 1800-1900 K is generally achieved on off-axis SiC(0001) wafers, owing to the concept of step-controlled epitaxy (see in [4]) by chemical vapour deposition (CVD). Horizontal [7] and vertical cold wall [8][9][10], chimney [11], horizontal hot wall [12][13][14][15][16] and planetary reactors [17] can be used. More recently, chimney-type reactors working at high temperature (>2000 K) with hot walls were developed to increase the growth rate to 25-100 µm h −1 [11,18,19].…”