Simulation of the transport of sputtered atoms and effects of processing conditions

Settaouti, A.; Settaouti, L.

doi:10.1016/j.apsusc.2008.03.042

Cited by 19 publications

(11 citation statements)

References 22 publications

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“…In simulations performed by Neamtu et al it is shown that the energy distribution of the atoms in PLD is constituted on the one hand by a small fraction of atoms that are thermalized, and on the other hand by a broad contribution with larger energies. For similar deposition conditions the computations of Settaouti and Settaouti for sputter deposition show a more regular energy distribution of the landing atoms. However, the high energy part of the energy distribution looks very similar.…”

Section: Composition Thickness and Cell Parameters Of The Four Studmentioning

confidence: 79%

Nondestructive Method for the Determination of the Electric Polarization Orientation in Thin Films: Illustration on Gallium Ferrite Thin Films

et al. 2017

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The knowledge and control of the electric polarization in multiferroic thin films is currently the subject of extensive research efforts. This is the key toward a possible transformation into devices of the exciting phenomena such as conductance modification or polarity observed at ferroelectric domain walls. The main methods currently available to determine the polarization characteristics in thin films suffer from being local, time demanding, potentially vitiated by artefacts, or even blinded in some cases. A nondestructive method based on resonant diffraction is proposed for the determination of the polarization orientation in multiferroic, ferroelectric, or pyroelectric thin films. The method is experimentally illustrated for multiferroic gallium ferrite thin films. Its validity is also theoretically shown for the perovskite‐based structure of the emblematic ferroelectric Pb(Zr,Ti)O3, which augurs numerous prospects for its potential applications.

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Section: Composition Thickness and Cell Parameters Of The Four Studmentioning

confidence: 79%

Nondestructive Method for the Determination of the Electric Polarization Orientation in Thin Films: Illustration on Gallium Ferrite Thin Films

et al. 2017

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“…8, where the higher energy tail extends up to 100 eV but contains relatively few atoms. The findings, as mentioned earlier, are crucial since it is seen that energetic bombardment influences the characteristics, stress, microstructure, and surface roughness of the deposited films [32,56]. Therefore, high pressure considerably affected the morphology of the formed thin films, with a notable reduction in thickness and quality.…”

Section: Variation Of Temperature With a Fixed Pressure For Xenon Ionsmentioning

confidence: 64%

“…The SIMTRA simulation results were consistent with those reported in Refs. [32,[57][58][59][60] regarding the impact of various vacuum chamber gas parameters on the kinetic energy of ejected atoms reaching the substrate.…”

Section: Variation Of Temperature With a Fixed Pressure For Xenon Ionsmentioning

confidence: 99%

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Investigation using Monte-Carlo codes simulations for the impact of temperatures and high pressures on thin films quality

Bouazza

2023

Rev. Mex. Fís.

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The quality of thin films represents the key to any improvement made in the device components manufacturing, and the way to obtain this quality based on deposition parameters takes the attention of our group. In this work, using the sputtering technique in the context of the Monte-Carlo approximation, an investigation of the effect of temperature and elevated pressure on the number of ejected particles and hence their deposition and the creation of finest thin films are applied. A vacuum chamber with 30x30x50 cm in dimension holding a magnetron which has a 2 cm in radius circular target was created. Inside this chamber, 105 particles of Argon (Ar) followed by the same number of xenon (Xe) gas are injected. This target moves away by 15cm from the substrate (with 7 cm in radius), containing three materials (Silicon (Si), germanium (Ge), and copper (Cu)) widely used in advanced technologies as in electronics and photovoltaic cells panels. Evident and satisfactory results were obtained, demonstrating that increasing pressure (0.5, 2, and 5 Pa) for both gases drops off in a spectacular way the total number (with different values) of the material particles reaching the substrate and disrupting the morphology of the thin films. moreover, and contrary to pressure, it has also been proved that mounting gas temperatures of 100, 300, and 600 K, representing three different states in kelvin degrees, where 100 K-173°C for the low (cold), 300 K27°C for the regular (atmospheric) and 600 K327°C for the high (warm) instances, supply a large number of materials atoms in substrate-level which conduct to the finest quality of the thin films. In addition, germanium gives the best results compared to silicon and copper.

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“…Among them, reactive magnetron sputtering is being adopted in many emerging research domains for preparing thin films with good physical properties. In the reactive sputtering process, several deposition parameters such as O 2 partial pressure, direct current (DC) power and deposition pressure influence the deposited film properties [26]. In case of copper oxide, the O 2 gas ratio in the total flow with argon is found to be critical as it affects the phase formation [24,27].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of CuO thin films by a direct current reactive sputtering process for CO gas sensing application

Mahana¹,

Mauraya²,

Kumaragurubaran³

et al. 2023

Phys. Scr.

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A direct current magnetron reactive sputtering, one of the well-known physical vapour deposition (PVD) techniques, was employed for the preparation of CuO thin films at room temperature for CO gas sensing application. The effect of the O2 gas flow ratio on the phase formation of copper oxide was studied by varying the O2 flow rate in the total flow of Ar/O2 gas mixture. Cu2O phase was found to form at a low O2 flow ratio of 10 % and gradually converted into stable CuO phase with an increase in O2 flow ratio through the intermediate phase of Cu4O3. The films exhibited a granular morphology, and the average grain size increased with an increase in the O2 partial flow. Single-phase CuO thin film has been obtained with 40% of O2 gas flow ratio. The evolution of the copper oxide phases with increasing O2 partial flow was also confirmed using the Cu 2p and O 1s core-levels of X-ray photoelectron spectroscopy. The CO gas sensing characteristics of the CuO thin film were examined by varying the operating temperature in the range of 200-400 °C. An optimized CO sensing response of 127% has been obtained at 375 C towards 91 ppm concentration with a response/recovery time of 161 s / 99 s.

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Simulation of the transport of sputtered atoms and effects of processing conditions

Cited by 19 publications

References 22 publications

Nondestructive Method for the Determination of the Electric Polarization Orientation in Thin Films: Illustration on Gallium Ferrite Thin Films

Nondestructive Method for the Determination of the Electric Polarization Orientation in Thin Films: Illustration on Gallium Ferrite Thin Films

Investigation using Monte-Carlo codes simulations for the impact of temperatures and high pressures on thin films quality

Synthesis of CuO thin films by a direct current reactive sputtering process for CO gas sensing application

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