Simulation of thickness effect in thin ferroelectric films using Landau–Khalatnikov theory

Lo, Veng Cheong

doi:10.1063/1.1598275

Cited by 93 publications

(54 citation statements)

References 45 publications

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“…the characteristic distance d and value R). This effect leads to the changing of diffusion field amplitude gR 2 and ξ value in accordance with (18) and (19) …”

Section: Ferroelectric Hysteresismentioning

confidence: 74%

“…We would like to underline, that the sum of equations (11)- (12) coincides with Landau-Khalatnikov equation [15], [18] for D only under the condition δρ s =0. This condition corresponds to the absence of random inhomogeneities or their seeding, and thus only the homogeneous polarization switching can take place when the external field exceeds thermodynamic coercive field.…”

Section: General Equationsmentioning

confidence: 99%

“…Let us consider the equilibrium solution of (18), which corresponds to the quasi-static external field changing. It is easy to check that the system (18) at 0 = Γ is not the Hamiltonian one, i.e.…”

Section: Ferroelectric Hysteresismentioning

confidence: 99%

“…For the finite size system (e.g. film) the model based on the inhomogeneous Landau-GinsburgDevonshire free energy predicts that coercive field increase or decrease with size increase depending on the boundary conditions (see e.g numerical calculation in [18]). This result can be explained with the help of the effective free energy depending on the film thickness which was derived recently [19,20] for monodomain ferroelectric film allowing for the depolarization field.…”

Section: Introductionmentioning

confidence: 99%

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Phenomenological description of polarization switching in ferroelectric semiconductors with charged defects

Morozovska¹,

Eliseev

2005

Physica Status Solidi (b)

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We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic one and the various hysteresis loop deformations (minor, constricted and double loops) have been obtained in the framework of our model. The obtained results qualitatively explain the ferroelectric switching in such bulk ferroelectric materials as SBN single crystals doped with Ce, PZT films doped with Nd and La-doped PZT ceramics.

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“…the characteristic distance d and value R). This effect leads to the changing of diffusion field amplitude gR 2 and ξ value in accordance with (18) and (19) …”

Section: Ferroelectric Hysteresismentioning

confidence: 74%

Section: General Equationsmentioning

confidence: 99%

Section: Ferroelectric Hysteresismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Phenomenological description of polarization switching in ferroelectric semiconductors with charged defects

Morozovska¹,

Eliseev

2005

Physica Status Solidi (b)

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“…Landau-Devonshire theory 30 and Landau-Khalatnikov theory 31 . Landau-Khalatnikov theory is a dynamical version of Landau-Devonshire by which P-E hysteresis loop could be regenerated.…”

Section: Theory Of Ferroelectricitymentioning

confidence: 99%

A facile method to enhance ferroelectric properties in PVDF nanocomposites

et al. 2015

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Poly(vinylidene fluoride) (PVDF)/nanoclay composites were prepared using melt compounding. The effect of acrylic rubber (ACM) as a compatibilizer on different polymorph formation and on the ferroelectric properties of nanocomposites were investigated. The intercalation and morphological structure of the samples were studied using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The infrared spectroscopy and X-ray analysis revealed the coexistence of beta and gamma crystalline forms in PVDF-clay nanocomposite, while in partially miscible PVDF/ACM/clay hybrids, three polymorphs of alpha, beta and g coexisted. The coefficients of electric field-polarization (E-P) Taylor expansion were calculated based on the Lorentz theory. Using a genetic algorithm, complex dielectric susceptibilities as well as the dielectric constants for each sample were calculated and optimized. The predicted dielectric constants were found to be in good agreement with the experimental results. A dielectric constant of 16 (10 Hz) was obtained for PVDF/ACM/ clay (90/10/5), which was 40% higher than that of the PVDF-clay (100/5) nanocomposite without ACM. The improved dielectric performance of the nanocomposites can be attributed to the compatibilizing effect of ACM, which facilitated the growth of b polymorph in the sample. Poly(vinylidene fluoride) (PVDF)/nanoclay composites were prepared using melt compounding. Effect of acrylic rubber(ACM) as a compatibilizer on different polymorph formation and ferroelectric properties of nanocomposites were investigated. Intercalation and morphological structure of the samples were studied using X-ray diffraction (XRD) and transition electron microscopy (TEM). Infrared spectroscopy and X-ray analysis revealed the coexistence of β and γ crystalline forms in PVDF/Clay nanocomposite while in partially miscible PVDF/ACM/Clay hybrids three polymorphs of α, β and γ coexisted. Inclusion of ACM found to improve the ferroelectric properties of PVDF/Clay nanocomposites which is mainly due to the growth of β polymorph in the sample. Coefficients of Electric field-Polarization (E-P) Taylor expansion were calculated based on free energy function according to Landau-Devonshire theory. Using genetic algorithm, complex dielectric susceptibilities as well as dielectric constant for each sample were calculated and optimized. Predicted electric displacement was found to be in quite good agreement with experimental results.

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Thickness dependence of susceptibility and phase transition temperature in ferroelectric thin films

2007

Physica Status Solidi (b)

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The thickness dependence of the susceptibility and paraelectric -ferroelectric phase transition temperature in ferroelectric thin films has been numerically simulated using Landau -Khalatnikov theory. This dependence is attributed to the presence of a surface layer near the electrode/film interface. In the presence of interfacial strain, the surface layer exhibits different ferroelectric properties compared with those inside the film. The thickness dependence of coercive field and remanent polarization has been successfully simulated before by considering the presence of this surface layer [V. C. Lo, J. Appl. Phys. 94, 3353 (2003)]. Based on the same model, the experimental trends in the thickness dependence of susceptibility and phase transition temperature can be reproduced.

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Simulation of thickness effect in thin ferroelectric films using Landau–Khalatnikov theory

Cited by 93 publications

References 45 publications

Phenomenological description of polarization switching in ferroelectric semiconductors with charged defects

Phenomenological description of polarization switching in ferroelectric semiconductors with charged defects

A facile method to enhance ferroelectric properties in PVDF nanocomposites

Thickness dependence of susceptibility and phase transition temperature in ferroelectric thin films

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