Simulation of Ti diffusion into LiNbO3 in Li-rich atmosphere

Zhang, De‐Long; Zhuang, Yu-Ran; Hua, Ping-Rang; Pun, Edwin Yue-Bun

doi:10.1063/1.2403239

Cited by 6 publications

(5 citation statements)

References 25 publications

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“…with a Li 2 O‐content‐dependent diffusion coefficient may include an erfc solution. This argument is supported by the previous work on Er 3+ diffusion in pure LN under the Li‐poor atmosphere, as well as the numerical results on Ti 4+ diffusion under Li‐rich atmosphere, which is modeled by a diffusion equation similar to Eq. .…”

Section: Resultssupporting

confidence: 76%

Er³⁺ Diffusion into MgO (5 mol%)‐Doped LiNbO₃ Crystal Under Li‐Poor Atmosphere

Zhang

Hua

et al. 2011

J. Am. Ceram. Soc.

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Under Li-poor atmosphere, local Er 3+ diffusion into highly MgO-doped LiNbO 3 (LN) crystal has been investigated. Three Z-cut 5 mol% (in growth melt) MgO-doped LN substrates locally coated with 44-60 nm thick Er-metal films underwent the respective Li-poor vapor transport equilibration (VTE) treatment at 1060°C, 1100°C, and 1130°C for the same 90 h duration. After the VTE, the reductions of Li 2 O content at the Er-free and Er 3+ -doped parts of the surface of the three samples, determined from the measured birefringence, have a similar value of 1.0 ± 0.1, 2.0 ± 0.1, and 2.3 ± 0.1 mol%, respectively. Secondary ion mass spectrometry was used to study the Er 3+ diffusion properties and the VTE effect on Mg 2+ profile. From the measured Er 3+ profiles, characteristic diffusion parameters such as 1/e diffusion depth, diffusivity, diffusion constant, activation energy, surface concentration, solubility, solubility constant, and heat of solution are determined. A comparison with the related results previously reported allows to conclude that heavy MgO-doping results in substantial decrease of both the diffusivity and solubility, and under the same diffusion temperature the diffusivity and solubility increase by as much as one order of magnitude and two times, respectively, as the diffusion atmosphere goes from the traditional argon to the Li-poor atmosphere. The Mg 2+ profiles reveal that the VTE may induce MgO diffusion and hence an inhomogeneous profile in the Er 3+ -diffused layer. This undesired effect is strong for the 1130°C VTE temperature whereas is relatively much weak for 1060°C. It is tentatively explained in terms of the Er 3+ diffusion and Li-poor VTE mechanisms.

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Section: Resultssupporting

confidence: 76%

Er³⁺ Diffusion into MgO (5 mol%)‐Doped LiNbO₃ Crystal Under Li‐Poor Atmosphere

Zhang

Hua

et al. 2011

J. Am. Ceram. Soc.

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“…The phase diagram of the Li 2 O−Nb 2 O 5 system reveals that a complex oxide with Li rich composition is separated into LiNbO 3 and Li 3 NbO 4 domains, and that a complex compound with Li deficient composition is divided into LiNbO 3 and LiNb 3 O 8 domains. , As the P O 2 is low, the formation of Li 3 NbO 4 phase and the corresponding standard Gibbs energy of formation can be represented by , L i 2 O + L i N b O 3 → L i 3 N b O 4 Δ G R 0 = Δ G f 0 ( L i 3 N b O 4 ) − Δ G f 0 ( L i N b O 3 ) − Δ G f 0 ( L i 2 O ) where Δ G R 0 is standard Gibbs energy change for the reaction. On the basis of ref Δ G R 0 is calculated to be approximately −195 kJ mol −1 at 700 °C (th...…”

Section: Resultsmentioning

confidence: 99%

“…XRD patterns (the 2θ range is 36-40°) of the Co:LN films in various P O 2 of 0.4, 10, and 20 Pa are shown in Figure 1 The phase diagram of the Li 2 O-Nb 2 O 5 system reveals that a complex oxide with Li rich composition is separated into LiNbO 3 and Li 3 NbO 4 domains, and that a complex compound with Li deficient composition is divided into LiNbO 3 and LiNb 3 O 8 domains. 11,12 As the P O 2 is low, the formation of Li 3 NbO 4 phase and the corresponding standard Gibbs energy of formation can be represented by 15,16 Li 2 O + LiNbO 3 f Li 3 NbO 4…”

Section: Resultsmentioning

confidence: 99%

“…LiNbO 3 (LN) is a well-known and intensively studied ferroelectric crystal, which shows strong room temperature spontaneous polarization of 70 μC/cm 2 , and ferroelectricity of the LN crystal can exist up to a very high ferroelectric transition temperature ( T E ) of 1483 K. , Following the idea of the preparation of DMSs, , RTFM is expected to be introduced to LN by TM doping, as demonstrated in Co-implanted LN wafers . Also, there is a pressing need to grow Co:LN films with highly crystalline quality, which can be used in practical devices, such as waveguide amplifiers/lasers and relevant nonlinear optical devices. − In this work, film deposition parameters are optimized to obtain Co:LN single crystalline films on Al 2 O 3 (001) substrates. The films exhibit RTFM of 0.58 μ B /Co and a high Curie temperature of ∼550 K, which coexists with the dielectric state.…”

Section: Introductionmentioning

confidence: 99%

“…9 Also, there is a pressing need to grow Co:LN films with highly crystalline quality, which can be used in practical devices, such as waveguide amplifiers/lasers and relevant nonlinear optical devices. [10][11][12] In this work, film deposition parameters are optimized to obtain Co:LN single crystalline films on Al 2 O 3 (001) substrates. The films exhibit RTFM of 0.58 µ B /Co and a high Curie temperature of ∼550 K, which coexists with the dielectric state.…”

Section: Introductionmentioning

confidence: 99%

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Room Temperature Ferromagnetism in Cobalt-Doped LiNbO₃ Single Crystalline Films

Song

Wang

Liu

et al. 2009

Crystal Growth & Design

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Cobalt-doped (5 at. %) LiNbO3 (Co:LN) single crystalline films were prepared by combinatorial laser molecular-beam epitaxy on Al2O3 (001) substrates. The oxygen atmosphere should be severely controlled to be approximately 10 Pa to obtain stoichiometric Li/Nb concentration. Determined by asymmetric X-ray diffraction and high-resolution transmission electron microscopy, the epitaxial relationship of the sample follows (003)<100>F ∥ (003)<100>S, (110)<001>F ∥ (110)<001>S, and (113)<1̅10>F ∥ (113) <1̅10>S (F and S denote the film and the substrate, respectively). The Co:LN films have a single-phase, where Co is not metallic but in the 2+ state. Co K-edge X-ray-absorption near-edge structure spectrum determines that Co2+ ions substitute for Nb5+ lattice sites, producing oxygen vacancies to compensate for the charge nonequilibrium, and shows that the Co−O bond length is greater than that of Co:LN films grown on Si (100) substrates. The Co:LN/Al2O3 films exhibit a high Curie temperature of ∼550 K and room temperature ferromagnetism of 0.58 μB/Co arising from the bound magnetic polarons mechanism based on defects. This work opens a window to a class of single-phase multiferroics by introducing magnetic dopants to ferroelectric materials and to the mechanism of dopants induced ferromagnetism in insulators.

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