2022
DOI: 10.3390/electronics11020221
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Simulation of TSV Protrusion in 3DIC Integration by Directly Loading on Coarse-Grained Phase-Field Crystal Model

Abstract: As thermal management in 3DIC integration becomes increasingly important in advanced semiconductor node processes, novel experimental and modeling approaches are in great demand to reveal the critical material issues involving multiscale microstructures that govern the behavior of through-silicon-via (TSV) protrusion. Here, a coarse-grained phase-field crystal model properly coupled with mechanics through the atomic density field is used to simulate the formation of polycrystalline structures and protrusion of… Show more

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Cited by 4 publications
(2 citation statements)
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“…The Finite element method (FEM) emerged as a particularly suitable framework for solving the APFC model's equations [16,60,77,78], besides being also employed in PFC studies in the first place [79][80][81][82][83]. Indeed, it conveniently discretizes PDEs while exploiting inhomogeneous and adaptive meshes.…”
Section: Finite Element Methodsmentioning
confidence: 99%
“…The Finite element method (FEM) emerged as a particularly suitable framework for solving the APFC model's equations [16,60,77,78], besides being also employed in PFC studies in the first place [79][80][81][82][83]. Indeed, it conveniently discretizes PDEs while exploiting inhomogeneous and adaptive meshes.…”
Section: Finite Element Methodsmentioning
confidence: 99%
“…The Finite Element Method (FEM) emerged as a particularly suitable framework for solving the APFC model's equations [16,58,67,68], besides being also employed in PFC studies in the first place [69][70][71][72][73]. Indeed, it conveniently discretizes partial differential equations (PDEs) while exploiting inhomogeneous and adaptive meshes.…”
Section: Finite Element Methodsmentioning
confidence: 99%