Simulation Study of a <i>p</i>-GaN HEMT With an Integrated Schottky Barrier Diode

Yi, Bo; Wu, Zheng; Cheng, Junji; Huang, Haimeng; Zhang, Weijia; Ng, Wai Tung

doi:10.1109/ted.2021.3120970

Cited by 6 publications

(8 citation statements)

References 28 publications

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“…Figure 8(a) shows the influence of W Fin on the transfer characteristics for the CJL-MISFET and p-GaN Ga 2 O 3 -MISFET. Firstly, under the same W Fin , V TH of p-GaN Ga 2 O 3 -MISFET [23] is always about 2.2 V higher than that of the CJL-MISFET, which is about the same difference between the work functions of gate materials. This is because, for a Ni/Au gate, the last three items of ( 7) are replaced by the work function of Ni/Au.…”

Section: Analytical Model For V Th and Tcad Verificationmentioning

confidence: 93%

“…Although p-GaN is utilized for discussion in this paper, it provides a general approach for achieving similar high-performance E-mode Ga 2 O 3 MISFETs when using other wide-bandgap p-type materials with high work function (both wide bandgap and high electron affinity), such as p-AlGaN, p-ZnO, etc. A calibrated doping concentration of 8 × 10 19 cm −3 is used for the p-GaN with an activation energy of 0.16 eV [23]. The p-GaN layer is assumed to be ideally grown with a Ga-face on the top side.…”

Section: Introductionmentioning

confidence: 99%

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Analytical model and simulation study of a novel enhancement-mode Ga₂O₃ MISFET realized by p-GaN gate

Zhang

et al. 2023

Semicond. Sci. Technol.

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In this paper, we proposed a novel junction-less Ga2O3 Metal-Insulator-Semiconductor Field Effect Transistor (MISFET) with p-GaN gate, named p-GaN Ga2O3-MISFET. A heavily doped thin layer p-GaN is set in the trench gate region to deeply deplete the n-Ga2O3 channel region owning to the high work function of the p-GaN. Thus, high threshold voltage (VTH) and breakdown voltage (BV) can be obtained even with wide-fin design and low interface charge density (nint), which ensures easy fabrication and stable VTH. Analytical model and experimentally calibrated TCAD simulation confirm that with the increase of fin width (WFin), from 0.1 um to 0.5 um, VTH of p-GaN Ga2O3-MISFET varies from 3.2 V to 2.4 V with nint = -1×1011 cm-2, which is always about 2.2 V higher than those of the conventional junction-less Ga2O3 MISFET (CJL-MISFET). Besides, BV of the CJL-MISFET decreases from ~3400 V to ~45 V with the increase of WFin due to soft breakdown, while BV of the p-GaN MISFET only decreases to 2800 V caused by enhanced electric field at the corner of the trench gate. Moreover, the activation energy and doping concentration (when larger than 3×1019 cm-3) of p-GaN barely affect the VTH. Besides, high VTH is still remained in a common range of interface charge (from 1×1013 cm-2 to 2×1013 cm-2) at the p-GaN/Al2O3 interface.

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Section: Analytical Model For V Th and Tcad Verificationmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Analytical model and simulation study of a novel enhancement-mode Ga₂O₃ MISFET realized by p-GaN gate

Zhang

et al. 2023

Semicond. Sci. Technol.

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“…To reveal the effect of the different BPOA structures (D-, Sand G-BPOAs) on the dynamic switching and off-state blocking characteristics of the device, a physics-based technology computer aided design (TCAD) simulation in Silvaco Atlas is performed [13][14][15], where the key parameters are depicted in table 1 for simulation calibration. The ionization model with a shallow donor (∼1 × 10 15 cm −3 ) and a deep donor (∼2 × 10 17 cm −3 ) is used to calibrate the ionized doping concentration in the buffer layer, while taking into account other numerical models such as Shockley-Read-Hall, Auger model, polarization model, Fermi-Dirac statistics and impact ionization [16,17].…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

Guo,

Zhou,

et al. 2024

Semicond. Sci. Technol.

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Bonding pad over active (BPOA) layout, which stacks traditional horizontal structure pad electrodes vertically above the active area, is an area-effective device architecture and packaging-enabled solution for GaN-based HEMTs. In this work, the dynamic switching and electric field distribution of such layout, as well as associated capacitance-voltage and trapping characteristics, are comprehensively studied on D-mode GaN-on-sapphire HEMT by performing numerical simulations. In terms of different pad electrodes covering the active area, BPOA is composed of various structures such as gate-related and drain-related BPOAs (i.e. G-BPOA and D-BPOA), among which G-BPOA exhibits inferior switching characteristics due to the additional introduction of Miller capacitance that prolongs the device switching, while breakdown voltage of D-BPOA is 400~900 V lower than other BPOA counterparts due to the interplay between D-BPOA and the drain electrode. Furthermore, the effects of trap capture cross section and trap density on switching characteristics are evaluated. These results highlight the differences in electrical characteristics of various structures within the BPOA layout, and provide valuable insights into BPOA device design and performance improvement.

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“…The metal work function is 5.15 eV. Several important physical models have also been considered, such as narrowing of the band gap, high field saturation, doping dependency and Shockley-Read-Hall [17]. The mobility of the 2DEG under the gate has been set as 680 cm 2 /V•s [18] and the electron mobility of the MIS interface has been set as 100 cm 2 /V•s [19] because of the etch damage.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

et al. 2022

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A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted together. In the on-state, the double gates not only can restore the 2DEG by the higher electric potential, but also can form the electron accumulation layers, and thus increase the saturation output current and reduce the on-resistance. The face-to-face double gates together deplete the 2DEG by using the work function difference to realize E-mode, instead of by etching the AlGaN layer under the gate for the conventional MIS gate E-mode HEMT. The double-gate structure not only avoids etch damage, but also maintains both high threshold voltage and low on-resistance. Meanwhile, the step gate field plate modulates E-field distribution to increase the BV. In order to easily fabricate, the trench gate with step field plate must be located on the top of device, forming the flip-structure. The flip-structure is also beneficial to decrease the leakage current in the substrate. The simulated Vth, BV and Id of the DFF HEMT are 0.8 V, 465 V and 494 mA/mm, respectively. The FOM of the DFF HEMT is 79.8% and 444.2% higher than those of the conventional MIS-FP HEMT and MIS HEMT.

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Simulation Study of a p-GaN HEMT With an Integrated Schottky Barrier Diode

Cited by 6 publications

References 28 publications

Analytical model and simulation study of a novel enhancement-mode Ga₂O₃ MISFET realized by p-GaN gate

Analytical model and simulation study of a novel enhancement-mode Ga₂O₃ MISFET realized by p-GaN gate

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

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Simulation Study of a p-GaN HEMT With an Integrated Schottky Barrier Diode

Cited by 6 publications

References 28 publications

Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gate

Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gate

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

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Analytical model and simulation study of a novel enhancement-mode Ga₂O₃ MISFET realized by p-GaN gate

Analytical model and simulation study of a novel enhancement-mode Ga₂O₃ MISFET realized by p-GaN gate