Simulation tool for the prediction of heavy ion cross section of innovative 130 nm SRAMs

Contribution to SER prediction: A new metric based on RC transient simulations

“…This noise source current model takes as input the ion physical characteristics (initial energy, particle species) and location (point of generation, strike angle). The current modeling is based on a simplified diffusion-collection model [10][11][12][13][14][15][16][17][18]. The model output is the current generated at the sensitive zone of the device, i.e.…”

“…This direct injection of the current at the sensitive node has been recognized from many years as not enough realistic, even for bulk technologies [20][21]. However, for specific cases, like SER simulations, this way is acceptable when a good balance between accuracy and speed is required to treat a huge quantity of data [10][11][12][13][14].…”

“…Indeed, "current injection" approach does not take into account internal changes generated within the device by the voltage variation induced in the circuit by the particle generation. So, the SER could be underestimated [10,11]. However, "current injection" provides a first order modeling necessary for quick analysis of thousand of cases necessary to perform SER prediction.…”

Collected charge analysis for a new advanced transient model by TCAD simulation in 90nm technology

“…In a simple abrupt N + P junction the depletion zone could be calculated from the following equations (4)(5). Thus, the total depletion depth X d is obtained with the equation (7).…”