Simulations of chalcopyrite/c-Si tandem cells using SCAPS-1D

Kim, Kihwan; Gwak, Jihye; Ahn, Seung Kyu; Eo, Young-Joo; Park, Joo Hyung; Cho, Jun-Sik; Kang, Min Gu; Song, Hee‐eun; Yun, Jae Ho

doi:10.1016/j.solener.2017.01.031

Cited by 115 publications

(34 citation statements)

References 23 publications

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“…Friedman et al [8] have obtained an e ciency of 30% monolithic GaInP/GaAs tandem device and Gee et al [9] recorded with an e ciency 31% of GaAs/Si mechanically stacked tandem device for concentrator applications. Theoretical studies of CGS/CIGS, InGaN/CIGS, InGaP/GaAs, indium gallium nitride (In0.48Ga0.52N/In0.48Ga0.52N), chalcopyrite/c-Si, and aSi:H/c-Si tandem device have also been reported by several researchers [10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 81%

A novel design of CTZS/Si tandem solar cell: A numerical approach

Bibi

Farhadi

Rahman

et al. 2021

Preprint

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Multijunction or tandem solar cells can split the solar spectrum over several subcells with different bandgaps to transform the sunlight into electricity more effectively than single-junction solar cells. The monolithic tandem design of third generation silicon solar energy materials is auspicious for photovoltaics. In this paper, the Simulation-based studies of copper zinc tin sulfide/Silicon (CZTS/Si) tandem cells based on CZTS as an upper subcell and silicon as a lower subcell absorber layer have been performed using SCAPS-1D. This study aims to evaluate the CZTS tandem cells' performance based on the fact that both subcells are simulated to produce the best efficiency recorded at its bandgap. The Simulation and optimization of the single junction CZTS and Si solar cells were initially performed to fit the state-of-art records efficiency of 11.65% and 18.7%, respectively. Further, both the upper and lower cell has evaluated at different thicknesses for tandem configuration after validation. Also, to obtain the current matching condition for tandem structure, the upper subcell's performance is investigated at different thickness ranges from 0.1 µm -1 µm while keeping the lower subcell thickness at 80µm. Thus, at optimized upper absorber thickness of 0.191 µm and lower subcell 80 µm at transmitted spectrum the current matching condition obtained and gave an efficiency of 10.6% and 11.9%, respectively. The maximum efficiency of ~ 23 is obtained for tandem design with enhancing open circuit voltage 1.4 V.

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Section: Introductionmentioning

confidence: 81%

A novel design of CTZS/Si tandem solar cell: A numerical approach

Bibi

Farhadi

Rahman

et al. 2021

Preprint

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“…For the 2-T monolithic tandem, a recombination layer (ITO) was introduced and the condition where the current densities of the two cells match are matched was fulfilled by varying the thicknesses of the two perovskite materials. This method is widely used in the simulation of tandem cells using SCAPS-1D [11,32,33].…”

Section: Methodsmentioning

confidence: 99%

Investigation of non-Pb all-perovskite 4-T mechanically stacked and 2-T monolithic tandem solar devices utilizing SCAPS simulation

et al. 2021

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SCAPS simulation was utilized to complement previously published perovskite-on-Si tandem solar devices and explore herein viable all-perovskite 4-T mechanically stacked and 2-T monolithic non-Pb tandem structures. CsSn0.5Ge0.5I3 (1.5 eV) was used as top cell wide bandgap absorber, while CsSnI3 (1.3 eV) was chosen as bottom cell low bandgap absorber. The top cell was simulated with AM 1.5G 1 Sun spectrum, and the bottom cell was simulated with the filtered spectrum from the top cell. To form a 2-T monolithic tandem device, ITO was used as the recombination layer; the current matching condition was investigated by varying the thickness of the absorber layers. For a current-matched device with a Jsc of 21.2 mA/cm2, optimized thicknesses of 450 nm and 815 nm were obtained for the top and bottom absorber layers, respectively. At these thicknesses, the PCEs of the top and bottom cells were 14.08% and 9.25%, respectively, and 18.32% for the final tandem configuration. A much simpler fabricated and simulated 4-T mechanically stacked tandem device, on the other hand, showcased top and bottom cell PCEs of 15.83% and 9.15%, at absorber layer thicknesses of 1300 nm and 900 nm, respectively, and a final overall tandem device PCE of 19.86%.

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“…Such tandem solar cellshave a theoretical efficiency limit of >40% 15 . Various materials combinations for tandem cells are currently under investigation, the most prominent being perovskites on c‐Si, 16 III‐V on c‐Si, 17 III‐V on III‐V, 18 perovskite on perovskite, 19 perovskite on CIGS 20 and CIGS on Si 21 in 2‐terminal (2 T), 3 T or 4 T configurations. Both 2 T and 4 T configurations show advantages and disadvantages: 2 T tandem cells benefit from easier, less costly module integration using established production technologies, whereas 4 T cells maximize power output without the need of current matching between the two sub‐cells, but require non‐standard module integration of the top and bottom cells.…”

Section: Multijunction Pv Cells and Modulesmentioning

confidence: 99%

IPVF's PV technology vision for 2030

Oberbeck

Alvino²,

Goraya

et al. 2020

Progress in Photovoltaics

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Current single-junction crystalline silicon (c-Si) solar cells are approaching their power conversion efficiency (PCE) limit. Tandem solar cells are expected to overcome such efficiency limit, with perovskite on c-Si tandems being a promising candidate for commercialization over the next years. This work aims atdescribing the conditions that tandem cells and modules need to fulfill to successfully enter the market in 2030.We first estimate that industrial c-Si photovoltaic modules may reach a price level of about 15 c$/W in 2030 at a PCE of 22-24%, with an expected lifetime of 30 years and an annual degradation of 0.5%. For commercial relevance, we anticipate that tandem module efficiencies need to be increased to reach around 30%, while matching lifetime and degradation rate of c-Si modules. Provided these conditions, we find that these tandem modules could then have a cost bonus of around 5-10 c $/W compared to c-Si modules for reaching equal levelized cost of energyvalues.

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Simulations of chalcopyrite/c-Si tandem cells using SCAPS-1D

Cited by 115 publications

References 23 publications

A novel design of CTZS/Si tandem solar cell: A numerical approach

A novel design of CTZS/Si tandem solar cell: A numerical approach

Investigation of non-Pb all-perovskite 4-T mechanically stacked and 2-T monolithic tandem solar devices utilizing SCAPS simulation

IPVF's PV technology vision for 2030

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