Simultaneous Determination of Surface Potential and Excess Carrier Concentration with the Pulsed Surface Photovoltage Method

Dittrich, Th.; Brauer, M.; Elstner, L.

doi:10.1002/pssa.2211370133

Cited by 17 publications

(6 citation statements)

References 6 publications

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“…However, one has to consider the so-called Dember voltage ͑the Dember voltage has positive sign and amounts to about 20 mV in typical conditions͒. 33 One might then interpret the 6-7 mV PV as the superposition of a positive Dember voltage and a small negative contribution, suggestive of weak depletion conditions. If the surface turns to strong accumulation, no photovoltaic effect is expected at all and the accumulation layer acts as an efficient recombination region.…”

Section: Resultsmentioning

confidence: 99%

Etch Rates of Anodic Silicon Oxides in Dilute Fluoride Solutions

Yahyaoui

Dittrich

Aggour

et al. 2003

J. Electrochem. Soc.

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The etch rates of anodic oxides in dilute fluoride solutions have been determined by using a new approach to the analysis of anodic current oscillations. The variation of the thickness of the anodic oxide with time has been measured by in situ Fourier transform infrared spectroscopy. The change in oxide thickness can be simulated by considering the time-dependent current and the etch rate of the oxide in the HF-containing solution. The pH-dependent etch rates can be well fitted for different concentrations of NH 4 F by applying Judge's model ͓J. Electrochem. Soc., 118, 1772 ͑1971͔͒. The coefficients in Judge's model are obtained for the etching process of the respective anodic oxides. The electronic properties of the Si/anodic oxide interface, which have been investigated by in situ photovoltage and photoluminescence measurements, correlate with the anodic current.

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Section: Resultsmentioning

confidence: 99%

Etch Rates of Anodic Silicon Oxides in Dilute Fluoride Solutions

Yahyaoui

Dittrich

Aggour

et al. 2003

J. Electrochem. Soc.

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“…The band bending at the p c‐Si/SiO 2 interface was characterized by SPV measurements at high excitation densities 14. The results were approximately the same for all samples and yield after correction for the Dember voltage a band bending of 250 mV.…”

Section: Methodsmentioning

confidence: 85%

The influence of the silicon/silicon oxide space charge region on excess charge carrier kinetics in silicon

Moreno

Kunst

2010

Physica Status Solidi (b)

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Excess charge carrier kinetics in p-doped crystalline silicon (Si) wafers covered by SiO 2 films is investigated by transient photoconductance and surface photovoltage measurements. This makes it possible to distinguish between excess charge carriers collected in the Si/SiO 2 heterojunction and those in the Si volume. The decay of the photoconductance signal in the millisecond time range could be unambiguously attributed to excess charge carriers stored in the space charge region. The decay of these charge carriers appears to be independent of the volume lifetime. The difference between the behaviours in Si/ SiO 2 and Si/SiN x is discussed.

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“…The usual sign convention for the SPV signal is used where positive signals refer to a positive charge at the surface. 15 The theory of excess charge carrier kinetics for TRMC measurements is given in Refs. 4 and 7.…”

Section: Trmcmentioning

confidence: 99%

“…15 The SPV measurements are induced by 532 nm (10 ns FWHM) pulses. The usual sign convention for the SPV signal is used where positive signals refer to a positive charge at the surface.…”

Section: Trmcmentioning

confidence: 99%

Comparison between transient and frequency modulated excitation: Application to silicon nitride and aluminum oxide coatings of silicon

Klein

Ohm

Fengler

et al. 2014

Review of Scientific Instruments

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Contactless measurements of the lifetime of charge carriers are presented with varying ways of photo excitation: with and without bias light and pulsed and frequency modulated. These methods are applied to the study of the surface passivation of single crystalline silicon by a-SiN(x):H and Al2O3 coatings. The properties of these coatings are investigated under consideration of the merits of the different methods.

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Simultaneous Determination of Surface Potential and Excess Carrier Concentration with the Pulsed Surface Photovoltage Method

Cited by 17 publications

References 6 publications

Etch Rates of Anodic Silicon Oxides in Dilute Fluoride Solutions

Etch Rates of Anodic Silicon Oxides in Dilute Fluoride Solutions

The influence of the silicon/silicon oxide space charge region on excess charge carrier kinetics in silicon

Comparison between transient and frequency modulated excitation: Application to silicon nitride and aluminum oxide coatings of silicon

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