Simultaneous diffusion of Si and Ge in isotopically controlled heterostructures

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

“…[19]. For our growth temperature, the resulting calculated diffusion length for Ge diffusion into Si is found below 100 nm, very much inferior to (much less than) the typical 30 mm extension of the diffusion zone contrast in our observations.…”

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

“…7 As the aggressive scaling of modern devices will soon lead to devices with characteristic dimensions of only a few nanometers, the understanding of atomic diffusion and the stability of related complexes is becoming increasingly important in group IV semiconductors. [8][9][10][11][12] The most fundamental process of matter transport in Si 1−x Ge x is self-diffusion, which has been studied by both experimental [13][14][15][16][17][18][19][20] and theoretical 21,22 methods. Although E centers have been studied extensively in Si ͑Refs.…”

Self-diffusion in germanium isotope multilayers at low temperatures

“…6 A fundamental quantity is the self-diffusivity of the host atom in crystalline materials. From self-diffusion experiments with isotopically enriched heterostructures, important information on the properties of native point defects in Si, 7 SiGe, 8 GaP, 9 GaAs, 10 GaSb, 11 SiC, 12 SiN, 13 and TiB 2 ͑Ref. 14͒ were obtained.…”