Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

Yokosawa, Kosuke; Akimoto, Tomoki; Okada, Yukinori; Ueno, Kazuyoshi

doi:10.1109/edtm.2019.8731211

Cited by 4 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the Ni layer was etched by the chlorine gas generated during the MoCl 5 intercalation, it may be possible to remove the Ni layer simultaneously during the intercalation. 52) Efficiency and stability of MoCl 3 intercalation were also demonstrated for transparent electrode application of a solar cell. 53) A sheet resistance of about 80 Ω/□ with a 95% optical transmittance was obtained with the BLG.…”

Section: Intercalation Doping To Mlgmentioning

confidence: 99%

Advances in multilayer graphene processes for metallization and high-frequency devices

Ueno

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Multilayer graphene (MLG) has been expected as an alternative material for nanometer wide interconnects. However, it has not been put into practical use, since the process technology that leads to practical use has been immature. Recent advances in the MLG processes and applications such as MLG capped copper interconnects, direct deposition of MLG by solid-phase deposition at a low-temperature, stable intercalation doping to MLG, and selective CVD of high crystallinity MLG for inductor and antenna applications are reviewed. According to these advances, MLG is considered to be approaching to the practical applications for device metallization and high frequency devices. Based on the characteristics of MLG as a conductor and recent development trends, the prospects and issues for future practical use of MLG graphene are discussed.

show abstract

Section: Intercalation Doping To Mlgmentioning

confidence: 99%

Advances in multilayer graphene processes for metallization and high-frequency devices

Ueno

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Multilayer graphene (MLG) intercalated with metalchlorides has been expected as the method to lower the electrical resistivity of MLG interconnects. 7,[15][16][17][18][19][20][21][22][23] In addition, MoCl 5 intercalation shows higher chemical stability than the other metal-chlorides. 18,19,[24][25][26] In our previous study, it was found that the temperature of MoCl 5 intercalation into bilayer graphene (BLG) can be reduced down to 150 °C by using the higher chemical concentration than previous reports.…”

Section: Introductionmentioning

confidence: 99%

“…The G/D ratio of SLG does not depend on the reaction time. The longer chemical reaction during the MoCl 5 intercalation process may degrade the crystallinity of graphene due to the highly corrosive Cl 2 gas generated from MoCl 5 intercalation reaction 22,34). However, the G/D ratios of the TLG and BLG are higher than that of SLG even after the extended reaction time.…”

mentioning

confidence: 99%

Reaction temperature and time dependence of MoCl₅ intercalation to few-layer graphene

Ketsombun

Asselberghs³

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The efficient MoCl5 intercalation process is required to reduce the resistance of graphene interconnects. We found that optimum intercalation temperature and time depends on the layer number of few-layer graphene. The bilayer graphene was intercalated at 175 °C without serious damage, besides that higher temperature of 200 °C was required to intercalate tri-layer graphene (TLG) with a fixed reaction time for 60 min. Although we can reduce the intercalation temperature for TLG, longer reaction time is required and higher damage is found. After considering both viewpoint of the effective doping and low damage, the high reaction temperature with short reaction time condition may be suitable for the TLG intercalation process. The stacked upper layer is considered to protect the underlying layer from chemical damage during the intercalation process and it leads to the higher activation energy for intercalation at the same time. Therefore, higher reaction temperature or longer reaction time are required for intercalating FLG with more layer numbers.

show abstract

Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl₅ Intercalation

Ketsombun

Akimoto

Ueno

2021

2021 IEEE International Interconnect Technology Conference (IITC)

View full text Add to dashboard Cite

Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

Cited by 4 publications

References 4 publications

Advances in multilayer graphene processes for metallization and high-frequency devices

Advances in multilayer graphene processes for metallization and high-frequency devices

Reaction temperature and time dependence of MoCl₅ intercalation to few-layer graphene

Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl₅ Intercalation

Contact Info

Product

Resources

About

Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

Cited by 4 publications

References 4 publications

Advances in multilayer graphene processes for metallization and high-frequency devices

Advances in multilayer graphene processes for metallization and high-frequency devices

Reaction temperature and time dependence of MoCl5 intercalation to few-layer graphene

Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5 Intercalation

Contact Info

Product

Resources

About

Reaction temperature and time dependence of MoCl₅ intercalation to few-layer graphene

Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl₅ Intercalation