2009
DOI: 10.1063/1.3078288
|View full text |Cite
|
Sign up to set email alerts
|

Simultaneous generation and detection of ultrashort voltage pulses in low-temperature grown GaAs with below-bandgap laser pulses

Abstract: We present a method that allows for the simultaneous generation and detection of ultrashort voltage pulses, which propagate on a planar transmission line, in the same material with laser pulses of the same wavelength. The generation is accomplished by exciting band-tail states below the fundamental bandgap of a low-temperature grown GaAs layer, while the detection takes advantage of the electro-optic effect in the GaAs material. This simple scheme considerably enhances previous measurement techniques and is ca… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
16
0

Year Published

2011
2011
2018
2018

Publication Types

Select...
5
1

Relationship

3
3

Authors

Journals

citations
Cited by 9 publications
(16 citation statements)
references
References 19 publications
0
16
0
Order By: Relevance
“…Except for the type of microwave probe the setup is identical to the one discussed in Ref. [6]. Although we perform all measurements in the time domain, in which also the majority of experimental results is specified, the data analysis is carried out in the frequency domain.…”
Section: Experimental Setup Model For Data Analysis and Uncertaintymentioning
confidence: 99%
See 1 more Smart Citation
“…Except for the type of microwave probe the setup is identical to the one discussed in Ref. [6]. Although we perform all measurements in the time domain, in which also the majority of experimental results is specified, the data analysis is carried out in the frequency domain.…”
Section: Experimental Setup Model For Data Analysis and Uncertaintymentioning
confidence: 99%
“…Optoelectronic techniques, in combination with femtosecond lasers, are well suited for the characterization of ultrafast sampling oscilloscopes, mainly due to their unmatched measurement bandwidth that even exceeds 1 THz [6]. The time and frequency axis of such techniques is traceable to the SI units.…”
Section: Introductionmentioning
confidence: 99%
“…2 Low-temperature grown and erbium-doped gallium arsenide (LT GaAs, Er:GaAs) have commonly been used for PCS applications over several decades. [3][4][5] More recent work has demonstrated that the inclusion of selfassembling ErAs nanoparticles into the GaAs matrix offers tunable lifetimes and improves overall performance. 6,7 Fast switching capabilities and other favorable characteristics have led to photoconductive switches being widely employed in the generation and detection of ultrafast electrical pulses, 5 pulsed microwave power and radar technologies, 8 and terahertz (THz) imaging applications.…”
Section: Introductionmentioning
confidence: 99%
“…However, because a significant portion of the 900 nm laser power is transmitted through the GaAs substrate, and GaAs exhibits the EO effect, sampling is achieved by transmitting the focused sampling beam through a point between the center and outer conductors. This technique allows quasi-noninvasive sampling influenced only by propagation effects [9]. Detection of the change in polarization of the sampling beam is achieved as in the other two systems.…”
Section: Traceability At Ptbmentioning
confidence: 99%
“…The PTB system has been shown to be capable to generate and detect voltage pulses with a frequency spectrum extending up to 1 THz [9] and has been applied to the characterization of the time response of 70 GHz [10] and 100 GHz [3] sampling oscilloscopes. The measurement uncertainty is propagated using Monte-Carlo simulations, allowing for determination of correlations in the uncertainty estimate [3] and traceability of the full waveform measurement to the SI.…”
Section: Traceability At Ptbmentioning
confidence: 99%