Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway

Abstract

Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still challenging in this field. Herein, we report a RRAM device based on a chiral metal-organic framework (MOF) FJU-23-H2O with switched hydrogen bond pathway within its channels, exhibiting an ultralow set voltage (~0.2 V), a high ON/OFF ratio (~105), and a high rectification ratio (~105). It is not only the first MOF with voltage-gated proton conduction but also the first single material showing both rectifying and resistive switching effects. By single-crystal x-ray diffraction analyses, the mechanism of the resistive switching has been demonstrated.

Metal–Organic Frameworks as a Versatile Platform for Proton Conductors

“…[ 123,166 ] On the other hand, the conductive MOFs with switchable behavior can be applied as chemical sensor to detect external stimuli, such as gas, [ 167,168 ] light irradiation, electric and magnetic field. vi) The latest study has shown that MOF with switched hydrogen bond pathway may simultaneously achieve resistive switching and rectifying effects, [ 169 ] such material can be used as resistive random‐access memory (RRAM) for information storage. Meanwhile, it opens a novel direction for the potential applications of conductive MOF materials.…”

Coupled Electrical Conduction in Coordination Polymers: From Electrons/Ions to Mixed Charge Carriers

“…[46] Recently, Bai et al reported a CP-based separator to block the polysulfides and facilitate Li-ion transfer in the meanwhile. [48] The inner size of the pores of HKUST-1 is around 9 Å, which is larger than the Li + ions but smaller than polysulfides. As a result, the cycling time of a LiÀ S battery was improved over 1,500 cycles with a capacity decay of 0.019% per cycle.…”

“…The high-and low-resistance states of the FJU-23À H 2 O could be switched reversibly. [48] Hydrogen ion transport ways are generated by breaking and forming the OÀ H bonds under bias voltage, leading to revisible resistance states.…”

Recent advances in organic‐based materials for resistive memory applications

“…In recent years, researchers have successfully achieved the effective ways for improving the conductive ability of MOF materials by adsorbing small molecules and ions, which take full advantages of the unique periodic and porous structure of MOFs. These progresses also bring the new application of MOFs into the field of resistive memories 29,30,192‐195 …”

“…To date, a variety of functional materials have been discovered for resistive switching memory applications, 12,15 including organic materials, 17‐23 inorganic compounds, 24‐27 and organic‐inorganic hybrid materials, 28‐32 in either single‐component or multiple‐component form. Among these, organic‐based and organic‐inorganic hybrid materials have aroused particular interests due to their fascinating properties 21,30,33‐37 . Compared with the inorganic counterparts, organic and hybrid materials possess unique merits, such as low cost, light weight, high scalability, and, more importantly, compatibility with large‐area solution‐processing techniques (eg, screen printing and inkjet printing) for roll‐to‐roll fabrication 21,28,38‐40 .…”