Simultaneous measurement of electron and hole escape times from biased single quantum wells

Abstract

Escape time from a biased asymmetric double quantum well J. Estimate of the escape time of resonant tunneling electrons from a quantum well in doublebarrier heterostructures J. Appl. Phys. 66, 704 (1989); 10.1063/1.343541 Tunneling escape time of electrons from a quantum well under the influence of an electric field Appl.

A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure

“…The obtained values of the decay times were 0.32 and 0.69 ns at the energy position of 3.300 and 3.277 eV, respectively. These values are much longer than the values for the carrier sweep-out time observed in the GaAs SEEDs, 3 where the maximum electric-field strength was estimated, at most, as 100 kV/cm.…”

“…Note that the behavior of the observed spectrum is similar to that of ⌬T/T observed in the GaAs SEEDs. 3 Figure 2 shows the time evolution of ⌬T/T for energy positions of 3.300 and 3.277 eV, where both the center wavelength of the laser pulse and the wavelength of the monochromator were adjusted to the corresponding wavelengths. The energy position of 3.277 eV corresponds to the exciton resonance.…”

“…According to the previous work by Cavaille et al, 3 the experimental data may be explained as follows. Excitons generated by the resonant excitation are dissociated by F int , because the strength of F int is much larger than the field strength of about 100 kV/cm needed to dissociate the excitons in the 5 nm GaN well.…”

“…As time goes by, two processes are considered as the carrier annihilation mechanism in the well. ͑1͒ The carriers are swept out of the well through the thermionic emission process, 2,3,15 the tunneling process, 2,3,16 or the thermally assisted tunneling process. 2,16,17 ͑2͒ The carriers disappear through the recombination processes.…”

Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells

“…Note that the behavior of the observed spectrum is similar to that of T /T observed in GaAs self-electro-optic effect devices (SEEDs). 62,63) It takes about 50 ps for T /T to reach its maximum or minimum value. A schematic illustration of the change in the absorption coefficient around the exciton resonance is shown in Fig.…”