Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures

Uematsu, Masashi; Matsubara, Kota; Itoh, Kohei M.

doi:10.7567/jjap.53.071302

Cited by 3 publications

(4 citation statements)

References 31 publications

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“…This can be explained by the formation of C and Si interstitial pairs, which reduce the amount of Si interstitials that contribute to B diffusion, [8][9][10][11][12][13] and=or the retardation of B and Si interstitial cluster dissolution by the presence of C leading to a decrease in the amount of mobile B. 14) Moreover, in the sample with higher-energy C coimplantation, more C atoms exist and more B atoms remain after annealing.…”

Section: Apt Sims and Sr Measurementsmentioning

confidence: 99%

“…One effect is the suppression of B diffusion owing to the trapping of Si interstitials by C [8][9][10][11][12][13] and=or the retardation of B-Si interstitial cluster dissolution. 14) The other effect is the influence on B activation. 13,[15][16][17][18][19] When the B concentration is below 3 × 10 20 cm −3 , the presence of C enhances B activation.…”

Section: Introductionmentioning

confidence: 99%

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Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Shimizu

Inoue

Yano

et al. 2016

Jpn. J. Appl. Phys.

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The impact of carbon (C) co-implantation on boron (B) activation in crystalline silicon was investigated. The detailed distribution of B and C atoms and B activation ratios dependent on the C ion-implantation energies were examined based on three-dimensional spatial mappings of B and C obtained by atom probe tomography and from depth profiles of their concentrations from secondary ion mass spectrometry and depth profiles of carrier concentrations with spreading resistance measurements. At all C implantation energies (8, 15, and 30 keV), B out-diffusion during activation annealing was reduced, so that more B atoms were observed in the C co-implanted samples. The carrier concentration was decreased throughout the entire implanted region for C implantation energies of 15 and 30 keV, although it was only increased at greater depths for C co-implantation at 8 keV. Two different effects of C co-implantation, (I) reduction of B out-diffusion and (II) influence of B activation, were confirmed.

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Section: Apt Sims and Sr Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Shimizu

Inoue

Yano

et al. 2016

Jpn. J. Appl. Phys.

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“…As a method of introducing C, in addition to C codoping during crystal growth, C co-implantation, which is often used in Si device processing because of its compatibility with conventional device processing, has been investigated. [1][2][3][4][5][6][7][8][9][10] In our previous study, 4) Si self-, B and C diffusions were simultaneously observed using isotopically enriched 28 Si and natural Si ( nat Si) multilayers that were co-implanted with B and C, where the doses were too low to amorphize the sample but high enough to form immobile BI clusters. 14,15) The results showed that B diffusion near the kink region was reduced owing to the slower dissolution of immobile BI clusters with higher C dose.…”

Section: Introductionmentioning

confidence: 99%

“…Codoping of carbon (C) in silicon (Si) [1][2][3][4][5][6][7][8][9][10][11][12][13] is one of the most important methods for the formation of ultrashallow junctions because C reduces transient-enhanced diffusion (TED) by trapping Si self-interstitials (I's) generated by ion implantation. The mechanism of reducing TED has been studied by codoping C with boron (B) during crystal growth by molecular beam epitaxy (MBE), using B atoms as markers.…”

Section: Introductionmentioning

confidence: 99%

Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers

Isoda¹,

Uematsu²,

Itoh³

2016

Jpn. J. Appl. Phys.

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The effect of implanted carbon (C) on silicon (Si) self-diffusion has been investigated using pre-amorphized 28 Si/ nat Si multilayers. The isotope multilayers were pre-amorphized by Ge implantation followed by C implantation, and annealed at 950°C. Because of the presence of C, the Si selfdiffusion was slower in 30 min annealing than the self-diffusion without C. This was attributed to the trapping of Si self-interstitials by C. On the other hand, the Si self-diffusion with C was faster in 2 h annealing than the self-diffusion without C, except in the end-of-range (EOR) defect region. The cause of this enhanced diffusion was understood as the retardation of Ostwald ripening of EOR defects by C trapped at the defects. In the EOR defect region, however, Si self-diffusion was slower than the self-diffusion without C in both 30 min and 2 h annealing owing to the presence of C. Relaxation of the tensile strain associated with the EOR defects by the trapped C was proposed to be the main cause of the retarded diffusion in the EOR region.

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Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study

Shimizu

Kunimune

et al. 2018

Journal of Applied Physics

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Atom probe tomography and secondary ion mass spectrometry were used to investigate the effects of carbon (C) co-implantation and subsequent annealing at 600 to 1200 °C on the behavior of implanted boron (B) atoms in silicon. When B alone was implanted, annealing at 600 to 800 °C caused it to form clusters in the peak region (1020 cm−3) of the concentration profile, and diffusion only occurred in the low-concentration tail region (<1018 cm−3), which is thought to be the well-known transient enhanced diffusion. However, when co-implantation with C was performed, this diffusion was almost completely suppressed in the same annealing temperature range. In the absence of C implantation, annealing at 1000 °C caused B clusters to begin to dissolve and B to diffuse out of the peak concentration region. However, this diffusion was also suppressed by C implantation because C atoms trapped B atoms in the kink region found at the B concentration level of 2 × 1019 cm−3. At 1200 °C, B clusters were totally dissolved and a strong B diffusion occurred. In contrast to lower annealing temperatures, this diffusion was actually enhanced by C implantation. It is believed that Si interstitials play an important role in the interaction between B and C. This kind of comprehensive investigation yields important information for optimizing ion implantation and annealing processes.

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Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures

Cited by 3 publications

References 31 publications

Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers

Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study

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