Simultaneously higher thermal stability and lower resistance drifting for Sb/In_48.9Sb_15.5Te_35.6 nanocomposite multilayer films

Abstract

In this work, In48.9Sb15.5Te35.6 (IST) was introduced as a stable interlayer to improve the weak amorphous thermal stability and large resistance drift of Sb films. The results showed that Sb...

In–Sb Covalent Bonds over Sb2Se3/In2Se3 Heterojunction for Enhanced Photoelectrochemical Water Splitting

“…Furthermore, the result confirms the successful preparation of the Sb 2 Se 3 /In 2 Se 3 heterojunction. The above results reveal that In–Sb covalent bonds are formed during the construction of the heterogeneous structure, which further promotes charge carrier separation and diminishes interface defects. , …”

The microstructure and electrical and optical properties of Ge–Cu–Te phase-change thin films

“…2,3 Among various SCM candidates, an emerging technology known as phase change memory (PCM) offers prospective gains with regard to speed, excellent cycling endurance to 107 operations and storage capacity, computing capabilities, and steady process maturity for 3D integrated circuits (3D-ICs). 1,[4][5][6] The principle of PCM is based on the memory effects of a phase change material, exhibiting high-resistance semiconductor characteristics in an amorphous form and low-resistance metal properties in a crystalline form, and the phase change can be reversibly triggered by an electric pulse or a laser. [7][8][9][10] The huge resistance difference can be utilized to store binary data as "0" or "1".…”