In this work, In48.9Sb15.5Te35.6 (IST) was introduced as a stable interlayer to improve the weak amorphous thermal stability and large resistance drift of Sb films. The results showed that Sb...
The development of high-performance flexible memory is of great significance to today's rapidly growing Internet of Things market. In this paper, Ge2Sb2Te5 phase change films were prepared by magnetron sputtering...
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