Single &amp;amp; multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer

Shi, Koh Wen; Yow, K. Y.; Lo, Calvin

doi:10.1109/eptc.2014.7028290

Cited by 9 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, the higher photon energy allows the photolytic "cold" process, the breaking of chemical bonds, bene tting to organic materials processing such as wood and plastic but also highly transparent materials. The nanosecond regime is appreciated for its shorter processing times and applications as varied as laser processing of carbon ber-reinforced plastic [2], ablation of silicon nitride layers [3] grooving of semiconductor devices [4], patterning of indium tin oxide [5], or sapphire micromachining [6] were reported in that regime. Most applications require near diffraction limited beams outputs.…”

Section: Full Textmentioning

confidence: 99%

UV 20W-class single-mode nanosecond pulse delivery using a vacuum-free/ambient air inhibited-coupling hollow-core fiber

Leroi

Gérôme

Didierjean³

et al. 2023

Appl. Phys. B

View full text Add to dashboard Cite

Silica bers have been successful used to deliver high-power high-energy laser beam in the near-infrared and visible range but suffer from high absorption and color formation in the UV spectrum which disqualify then for such wavelength. Recently, the advances of inhibited-coupling hollow-core photonic crystal bers made them as an unique tool to transport UV radiation thanks to an ultralow overlap with the silica cladding and record losses down to 10 dB/km. By further optimizing such ber, we report in this letter a record single-mode delivery of 23.3 W (155 μJ) with 92% transmission from a 343 nm, 10 ns, 150 kHz laser source, corresponding to an improvement of the current state-of-the-art by two orders of magnitude.

show abstract

Section: Full Textmentioning

confidence: 99%

UV 20W-class single-mode nanosecond pulse delivery using a vacuum-free/ambient air inhibited-coupling hollow-core fiber

Leroi

Gérôme

Didierjean³

et al. 2023

Appl. Phys. B

View full text Add to dashboard Cite

show abstract

3-pass and 5-pass laser grooving & die strength characterization for reinforced internal low-k 55nm node wafer structure via heat-treatment process

Mohammad Nazri,

Yong,

Yusof

et al. 2024

View full text Add to dashboard Cite

Purpose Die edge quality with its corresponding die strength are two important factors for excellent dicing quality especially for low-k wafers due to their weak mechanical properties and fragile structures. It is shown in past literatures that laser dicing or grooving does yield good dicing quality with the elimination of die mechanical properties. This is due to the excess heat energy that the die absorbs throughout the procedure. Within the internal structure, the mechanical properties of low-k wafers can be further enhanced by modification of the material. The purpose of this paper is to strengthen the mechanical properties of wafers through the heat-treatment process. Design/methodology/approach The methodology of this approach is by heat treating several low-k wafers that are scribed with different laser energy densities with different laser micromachining parameters, i.e. laser power, frequency, feed speed, defocus reading and single/multibeam setup. An Nd:YAG ultraviolet laser diode that is operating at 355 nm wavelength was used in this study. The die responses from each wafer are thoroughly visually inspected to identify any topside chipping and peeling. The laser grooving profile shape and deepest depth are analysed using a laser profiler, while the sidewalls are characterized by scanning electron microscopy (SEM) to detect cracks and voids. The mechanical strength of each wafer types then undergoes three-point bending test, and the performance data is analyzed using Weibull plot. Findings The result from the experiment shows that the standard wafers are most susceptible to physical defects as compared to the heat-treated wafers. There is improvement for heat-treated wafers in terms of die structural integrity and die strength performance, which revealed a 6% increase in single beam data group for wafers that is processed using high energy density laser output but remains the same for other laser grooving settings. Whereas for multibeam data group, all heat-treated wafer with different laser settings receives a slight increase at 4% in die strength. Originality/value Heat-treatment process can yield improved mechanical properties for laser grooved low-k wafers and thus provide better product reliability.

show abstract

Laser grooving profile optimization for chip strength enhancement

Tsai

Chen

Wang

et al. 2017

2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

View full text Add to dashboard Cite

Single & multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer

Cited by 9 publications

References 5 publications

UV 20W-class single-mode nanosecond pulse delivery using a vacuum-free/ambient air inhibited-coupling hollow-core fiber

UV 20W-class single-mode nanosecond pulse delivery using a vacuum-free/ambient air inhibited-coupling hollow-core fiber

3-pass and 5-pass laser grooving & die strength characterization for reinforced internal low-k 55nm node wafer structure via heat-treatment process

Laser grooving profile optimization for chip strength enhancement

Contact Info

Product

Resources

About