Single crystal diamond wafers for high power electronics

Shikata, Shinichi

doi:10.1016/j.diamond.2016.03.013

Cited by 160 publications

(83 citation statements)

References 63 publications

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“…Diamond is known as one of the best wide bandgap semiconductors for high power devices . Microwave plasma‐assisted chemical vapor deposition (MPACVD) is an appropriate method to grow single crystal diamond for electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Issaoui

Tallaire

Mrad

et al. 2019

Physica Status Solidi (a)

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For the fabrication of vertical power electronic components, the use of a freestanding highly boron-doped single crystal diamond substrate is mandatory, on top of which a thin low-doped active layer is overgrown. The crystalline quality of this substrate is of prime importance as the high doping level required is also likely to lead to the generation of extended defects in the active layer. Herein, the improvement of the quality of thick highly boron-doped diamond films grown by chemical vapor deposition (CVD) is investigated. Codoping with a low amount of nitrogen is explored as a way to limit the formation and propagation of extended defects. It is shown that the growth rate and boron concentration are not impacted by the addition of nitrogen with the parameters used in this study. Surface morphology and defect density estimated for each amount of nitrogen are presented; and Raman spectroscopy confirms that nitrogen addition compensates the strain induced by boron incorporation in single crystal diamond. Codoping with nitrogen is thus demonstrated as a useful strategy to obtain high quality boron-doped diamond substrates potentially suitable for the development of power devices.

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Section: Introductionmentioning

confidence: 99%

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Issaoui

Tallaire

Mrad

et al. 2019

Physica Status Solidi (a)

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“…For example, the Baliga figure of merit, which discloses the block voltage and conduction loss of power devices, varies nonlinearly as a sixth power of the bandgap energy. Along with the high thermal conductivity, large carrier saturation velocity, high carrier mobility, and chemical inertness, diamond is considered a fascinating semiconductor with exceptional physical properties for high‐power, high‐frequency, and harsh environmental (i.e., strong radiation and high‐temperature) electronics applications . The 2‐dimensional hole gas (2DHG) on the hydrogen‐terminated diamond (H‐diamond) surface induced by atmospheric adsorbates or solid‐state acceptor transfer doping has been widely used to develop diamond electronic devices .…”

Section: Introductionmentioning

confidence: 99%

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

Yang

Sang

Liao

et al. 2019

Physica Status Solidi (a)

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Recent marked advances in diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) have raised the issue of gate reliability. Herein, the threshold voltage stability of MOSFETs based on hydrogen-terminated diamond surface conductivity is examined. The electrical output characteristic curves are characterized by cyclic gate sweeping from reverse to forward gate bias (RF) and from forward to reverse gate bias (FR), respectively. The characteristics of drain current versus drain voltage are affected by the gate bias sweeping direction. Marked hysteresis is also observed in the transfer curves for the RF and FR gate sweeping. The different gate sweeping directions induce threshold voltage variation and hole mobility change. The facts that 1) no extra interface states are generated due to gate sweeping and 2) the trapped charge density depends on the gate oxide thickness, reveal that charge trapping occurs at the border of the gate oxide.

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“…Diamond has been widely researched due to its excellent mechanical, optical, thermal and electrical properties such as the highest hardness, highest thermal conductivity, almost allband transmission, the highest carrier mobility and so on [1][2][3]. Based on the the properties, high quality diamond has been widely applied in the cutting tools [4], heat sinks [5], highpower windows [6]and electronic devices [7][8], especially the jewelries [9].…”

Section: Introductionmentioning

confidence: 99%

Homo-epitaxial growth of single crystal diamond in the purified environment by active O atoms

Liu

Lin

Yun

et al. 2018

Vacuum

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The pure oxygen was introduced into the growth environment of the single crystal diamond with different contents, and the growth characteristics of single crystal diamond and the reaction dynamics in the plasma were studied in detail. As the ratio of O 2 to H 2 is up to 1.5%, the unique shaped etching pits with eight symmetric crystallographic planes appear. Optical emission spectra present typical characteristic radicals in the O 2 incorporated growth environment. With amount of O 2 increases, the growth rate decreases gradually due to the low active carbon source concentration and electron temperature. In the carbon contained hydrogen plasma, O 2 will react with CH radicals preferentially at low concentration and the dynamic equilibrium of CH and C 2 radicals was achieved at the O 2 concentration of 0.5% and 1%. Accompanying with the O 2 addition, the nitrogen and silicon related impurities have been reduced during the epitaxial growth process. Meanwhile, all of the FWHM of characteristic peaks in Raman decrease obviously after the epitaxial growth without and with O 2 addition, and FWHM of most samples are about 2.6cm-1 , which are comparable with the natural type IIa SCD without stress.

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Single crystal diamond wafers for high power electronics

Cited by 160 publications

References 63 publications

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

Homo-epitaxial growth of single crystal diamond in the purified environment by active O atoms

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