Single Crystal Growth of Gallium Nitride Substrates Using an High Pressure High Temperature Process

Abstract

The use of standard bulk semiconductor crystal growth processes for the production of GaN is prohibited by both the high melt temperature of GaN and thermal decomposition of the compound into Ga metal and N2 gas. We have employed a novel hydrostatic pressure system to grow GaN crystals. A high temperature, ultra-high pressure process was developed using a solid-phase nitrogen source to form GaN crystals in a Ga metal melt. Using a thermal gradient diffusion process, in which nitrogen dissolves in the high temperature region of the metal melt and diffuses to the lower temperature, lower solubility region, high quality crystals up to ∼1 mm in size were formed, as determined by SEM, X-ray diffraction and micro-Raman analysis.