Single crystal ruthenium(II) complex dye based photodiode

Tataroğlu, A.; Dayan, Osman; Özdemir, Namık; Şerbetçi, Z.; Al-Ghamdi, Ahmed A.; Dere, A.; El-Tantawy, Farid; Yakuphanoğlu, F.

doi:10.1016/j.dyepig.2016.04.044

Cited by 50 publications

(8 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, the total electric field is stronger in this case than in the forward bias. When a diode is exposed to illuminations (= hc/qλ > E g ), many electron–hole pairs occur at the junction, and electrons may be recombined 4,23,24 . However, the recombination of the electron–hole pairs under the illumination effect decreases, so photocurrent increases in the reverse bias range because of the higher electric field value at the junction.It is well known that the conventional interfacial insulator layer such as SiO 2 formed on a semiconductor surface by the traditional methods (thermal or sputtering) cannot completely passivate the active dangling bonds at the semiconductor surface metal–insulator–semiconductor (MIS) type structures.…”

Section: Introductionmentioning

confidence: 99%

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Altındal

Azizian‐Kalandaragh

Ulusoy

et al. 2022

J of Applied Polymer Sci

View full text Add to dashboard Cite

Photoresponse of the Au/(Er2O3:PVC)/n‐Si diode was executed in a wide range of illumination intensity (P). Its basic electrical parameters such as ideality factor (n), barrier height (ΦB0), series and shunt resistances (Rs, Rsh), photocurrent (Iph), energy‐dependence of interface states (Nss), and photosensitivity (S) were calculated from the results of the current–voltage (I–V) measurements. At the negative‐bias region, an increase in Iph is observed due to the e−‐h+ pairs that occur as a result of increasing P and their drift in opposite directions under the internal electric field. The ln(Iph)–ln(P) plot shows a good linear behavior under various applied voltages. Their slopes vary from 1.47 to 1.64, indicating that empty trap levels, that is, levels not occupied by charges, are of low density. The values n, ΦB0, and Rs were obtained using the thermionic emission theory, Cheung, and Norde functions. The value of ΦB0 decreases with increasing n and P as linearly with ΦB0(n) = (−0.143n + 1.118) eV and ΦB0(P) = (−2 × 10−4P + 0.831) eV, respectively. This illumination coefficient of ΦB0 (=−2 × 10−4 eV/[mW/cm2]) is close to the temperature coefficient bandgap of Si (=−4.73 × 10−4 eV/K). These results show that the performed Au/(Er2O3:PVC)/n‐Si diode has excellent photo‐response and can be successfully used in photovoltaic applications instead of conventional metal–semiconductor diodes.

show abstract

Section: Introductionmentioning

confidence: 99%

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Altındal

Azizian‐Kalandaragh

Ulusoy

et al. 2022

J of Applied Polymer Sci

View full text Add to dashboard Cite

show abstract

“…6.b). The frequency characteristics for the C and G may be attributed to the presence of the interface states [47][48][49][50][51]. Because the interface states at low frequencies can follow the AC signal while they do not follow the AC signal at high frequencies [52].…”

Section: C-v and G/w-v Measurementsmentioning

confidence: 99%

Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

Aldırmaz¹,

Güler²,

Güler³

2021

Preprint

View full text Add to dashboard Cite

In this study, the Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy was used. Phase identification was performed with the Scanning electron microscope (SEM), and energy-dispersive X-ray (EDX). We observed in the austenite phase in Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy. To produce a new Schottky diode, CuZnAlMn alloy was exploited as a Schottky contact on p-type semiconductor silicon substrate. To calculate the characteristics of the produced diode, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) analyzes were taken at room temperature (300 K), in the dark and under various lights. Using electrical measurements, the diode's ideality factor (n), barrier height (Φb), and other diode parameters were calculated. Besides, the conductance / capacitance-voltage (G/C-V) characteristics of the diode were studied and in a wide frequency interval at room temperature. Also, the capacitance and conductance values strongly rely on the frequency. From the present experimental results, the obtained diode can be used for optoelectronic devices.

show abstract

“…Similarly, from Figure 9, the conductance remains constant with frequency at the positive voltage regime, however, in the negative regime, it increases while frequency increases. This observed behavior of conductance can also be attributed to the presence of the interface states series resistance [48]. The series resistance (R s ) of the fabricated photodiodes was investigated using the Nicollian and Goetzberger method [30], where;…”

Section: Transient Photocurrent Capacitance-voltage and Conductance-voltage Characteristics Of X % Ni-inzno (Nizo) Thin Filmmentioning

confidence: 99%

Optoelectrical Properties of NiInZnO (NIZO) Thin Films

Mensah-Darkwa¹,

Dere²,

Al‐Sehemi³

et al. 2019

J. Solar Eneg. Res. Updat.

View full text Add to dashboard Cite

This report presents the fabrication and characterization of x % Ni - InZnO (NIZO) Schottky diodes. The structural, optical and electrical properties of the fabricate Al/p-Si / x % Ni - InZnO /Au photodiodes were investigated. An average visible transmittance of about 75% - 85% has been obtained in the visible-light to near-infrared wavelength region. The optical bandgap was 3.17 ± 0.02 eV. Current-Voltage measurements were conducted to analyze the photodiode behavior under dark and light illumination. The reverse bias current increases together with increasing light illumination. The observed I-V results confirm the photoconductive and photovoltaic properties of the fabricated diode. There is an exponential relationship between the current and the voltage in the forward bias, confirming the rectification performance of the photodiode. The electrical properties of the fabricated photodiodes were evaluated using Cheung- Cheung and Norde’s methods. The transient photocurrent, capacitance-voltage-frequency and conductance-voltagefrequency plots indicate that the diode is very sensitive to light illumination. We also observe a strong correlation between capacitance and conductance on frequency, this was explained based on the presence of interface states. The obtained results suggest that the Ni-doped InZnO photodiodes can be useful in photovoltaic and optoelectronic applications.

show abstract

Single crystal ruthenium(II) complex dye based photodiode

Cited by 50 publications

References 42 publications

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

Optoelectrical Properties of NiInZnO (NIZO) Thin Films

Contact Info

Product

Resources

About

Single crystal ruthenium(II) complex dye based photodiode

Cited by 50 publications

References 42 publications

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

Optoelectrical Properties of NiInZnO (NIZO) Thin Films

Contact Info

Product

Resources

About

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes