Single crystal titanium carbide, epitaxially grown on zincblend and wurtzite structures of silicon carbide

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

“…For example, 1300-1400°C is required for CVD growth of epitaxial TiC [9,13]. In order to extend the area of applications and to reduce the associated fabrication costs, in recent years many efforts have been done for epitaxial TiC thin film deposition at low temperatures.…”

“…Hetero-epitaxial TiC films have been fabricated by both chemical and physical vapor deposition techniques (CVD, PVD) [13][14][15][16][17], usually requiring high substrate temperatures, above 1000°C. For example, 1300-1400°C is required for CVD growth of epitaxial TiC [9,13].…”

Reactive Sputtering Deposition of Epitaxial TiC Film on Si (100) Substrate

“…TiC coatings have been prepared by physical vapor deposition and chemical vapor deposition processes, including magnetron sputtering, pulsed laser deposition, evaporation, and plasma-assisted chemical vapor deposition [16][17][18][19][20][21]. Among these methods, reactive sputtering has several advantages such as high deposition rate, low impurity content, and it has been widely used for cost-effective industrial production [22].…”

Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

“…For example, it is well-known from the literature that superlattices of group 4 and 5 transition metal nitrides, e.g. 9 In a series of recent publications, we have demonstrated that coevaporation of C 60 and the transition metals Ti, V, and Nb can be used to deposit epitaxial films and superlattices of TiC, VC, and NbC at very low tem-peratures. A survey of the literature shows that it is difficult to deposit epitaxial carbide films by conventional chemical vapor deposition (CVD) and physical vapor deposition (PVD) techniques.…”