Single-Crystalline Bulk Acoustic Wave Resonators Fabricated With AlN Film Grown by a Combination of PLD and MOCVD Methods

Ouyang, Peidong; Yi, Xinyan; Li, Guoqiang

doi:10.1109/led.2024.3368433

Cited by 3 publications

(1 citation statement)

References 17 publications

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“…Qin et al fabricated 3.3 GHz FABR based on MOCVD epitaxially grown single crystal AlN film on SiC substrate [20]. Although there are many studies on FBARs based on single crystal AlN materials [21][22][23][24][25][26], these devices are mostly based on single AlN prepared on SiC or sapphire substrate using MOCVD method. Though single-crystal AlN developed by MOCVD is better than PVD-AlN, large residual stress [27][28][29] and expensive substrate confine it to the application scope to science study or laboratory.…”

Section: Introductionmentioning

confidence: 99%

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Wang,

Gao,

Yang

et al. 2024

Phys. Scr.

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Thin film bulk acoustic resonator (FBAR) with high quality factor (Q) is preferred for many communication applications. AlN film deposited in conventional FBAR fabrication process is poor, resulting in unsatisfactory device performance. This study demonstrated the comparison of two Si-substrate FBARs, adopting the same AlN deposition process by physical vapor deposition (PVD) method, however using different device fabrication method. Instead of depositing AlN film on Mo/SiO2/Si substrate in existing fabrication process, we deposited AlN directly on Si substrate by PVD to get better crystal quality piezoelectric layer of the FBAR. The full width at half maximum (FWHM) of rocking curve and surface roughness of AlN directly deposited on Si substrate are 1.4° and 1.96 nm, while those of AlN deposited on Mo/SiO2/Si substrate are 8.5° and 5.54 nm, respectively, indicating AlN deposited directly on Si substrate has a better crystal quality than that on Mo/SiO2/Si substrate. The dielectric loss of FBAR using AlN developed on Si substrate decreases from 0.4 Ω to 0.11 Ω leading to the increase of Qm from 470 to 830. By preserving the high quality AlN deposited on Si substate with film transfer method, the FBAR device enjoys an increasing of Q-values as high as 76%.

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Section: Introductionmentioning

confidence: 99%

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Wang,

Gao,

Yang

et al. 2024

Phys. Scr.

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Beyond Structural Stabilization of Highly‐Textured AlN Thin Films: The Role of Chemical Effects

Pshyk,

Patidar,

Alinezhadfar

et al. 2024

Adv Materials Inter

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The crystalline quality and degree of c‐axis orientation of hexagonal AlN thin films correlate directly with their functional properties. Therefore, achieving AlN thin films of high crystalline quality and texture is of extraordinary importance for many applications, but particularly in electronic devices. This systematic study reveals, that the growth of c‐axis‐orientated AlN thin films can be governed by a chemical stabilization effect in addition to the conventionally known structural, strain‐induced, stabilization mechanism. The promotion of in‐plane growth of AlN grains with c‐axis out‐of‐plane orientation is demonstrated on Y, W, or Al seed layers with different thicknesses and crystallinity preliminary exposed to N2 at room temperature. It is established that the stabilization mechanism is chemical in nature: the formation of an N‐rich surface layer on the metal seed layers upon exposure to N2 pre‐determines the polarity of AlN islands at the initial stages of thin film growth while the low energy barrier for the subsequent coalescence of islands of the same polarity contributes to grain growth. These results suggest that the growth of c‐axis oriented AlN thin films can be optimized and controlled chemically, thus opening more pathways for energy‐efficient and controllable AlN thin film growth processes.

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A High Power-handling Laterally-excited Bulk Acoustic Resonator with Scattering Vias in Double-layer Electrodes over +35 dBm

Wen,

Liu,

Zeng

et al. 2024

2024 IEEE Ultrasonics, Ferroelectrics, and Frequency Control Joint Symposium (UFFC-JS)

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Single-Crystalline Bulk Acoustic Wave Resonators Fabricated With AlN Film Grown by a Combination of PLD and MOCVD Methods

Cited by 3 publications

References 17 publications

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Beyond Structural Stabilization of Highly‐Textured AlN Thin Films: The Role of Chemical Effects

A High Power-handling Laterally-excited Bulk Acoustic Resonator with Scattering Vias in Double-layer Electrodes over +35 dBm

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