Single-Crystalline Ferromagnetic Mn₄Si₇ Nanowires

Abstract

We report the synthesis of single-crystalline Mn4Si7 nanowires using SiO and MnCl2 powders via the chemical vapor deposition method and their ferromagnetic properties. It is shown from XRD and TEM analyses that the synthesized nanowires have single-crystalline tetragonal Mn4Si7 structure with the growth direction along [002]. The magnetic measurements indicate that the nanowires are ferromagnetic with a Curie temperature of 120 K. In addition, it is found that the nanowires are degenerately doped. These results suggest that the ferromagnetic Mn4Si7 nanowires could be employed for Si-based spintronic nanodevices coupled with complementary metal−oxide−semiconductor integrated circuits.

Single-crystalline δ-Ni2Si nanowires with excellent physical properties

“…One-dimensional metal silicides have shown excellent field emission [7,8] and magnetic properties [9-11]. Hence, recently, the synthesis and study of 1-D metal silicide nanostructures and silicide/silicon or silicide/siliconoxide nanoheterostructures have been extensively investigated [9,12-18]. Among various silicides, Ni silicide NWs with low resistivity, low contact resistance, and excellent field emission properties [19,20] are considered as a promising material in the critical utilization for the future nanotechnology.…”

Investigation of structure, magnetic, and transport properties of Mn-doped SiC films

“…23,24 So the secondary phase Mn 4 Si 7 has no contribution to the ferromagnetism of the films examined at 300 K. Recent researches indicated that many types of defects could induce ferromagnetism. Furthermore, nearly all the Mn-C and Mn-Si compounds are not ferromagnetic except Mn 4 Si 7 and MnSi with Tc of 120 K and 47 K, respectively.…”

Preparation and magnetic properties of manganese silicide nanorods by a solid‐state reaction route

“…Thus, transition metal silicides can be applied in many fields, such as ohmic contact, metal‐oxide‐semiconductor (MOS) gate electrodes and energy conversion devices [4, 5]. Mn‐based silicides are very important intermetallic compounds for their remarkable electronic and magnetic properties [6]. Due to these attractive properties, Mn‐based silicides have potential applications as high temperature thermoelectric materials [7].…”