Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy

Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy

“…In order to reduce the non-radiation recombination defects and improve the electrical properties of the optoelectronic devices, it is necessary to yield high purity materials as active region for fabricating good quality devices. InAs 1 À x Sb x ternary semiconductor with a full composition range (0 ox o1) had been successfully grown by molecular beam epitaxy (MBE) [3,4] and metal organic chemical vapor deposition (MOCVD) [5,6]. As a simpler technique, liquid phase epitaxy (LPE) is appropriate for the fabrication of InAsSb optoelectronic devices due to high quality films grown at thermodynamic equilibrium.…”

“…Unfortunately, high quality layer grown by LPE can only be obtained when the lattice mismatch between the semiconductor film and the substrate is very small (typically less than 1%). Thus, suitable substrates for LPE growth of InAs 1 À x Sb x include only InAs, InSb and GaSb [5][6][7]. High crystalline quality of epitaxial layers of composition InAs 0.91 Sb 0.09 have been grown on GaSb substrates by LPE with a bandgap energy corresponding to 4.2 μm at room temperature, which is of interest for the fabrication of optoelectronic components for use in infrared CO 2 sensors [8].…”

High density near amorphous InSb nanowire arrays and its photo-electric performance

“…The exciton Bohr radius of InSb is about 65.5 nm [21], and the quantum confinement effect will dominate when the diameter of the InSb nanowire is less than its Bohr radius. These properties make it an ideal material for PE and long-wavelength detectors, field-effect transistors (FETs), quantum devices, etc.. [22][23][24][25][26][27][28][29][30][31][32][33] Most of the reported InSb nanowires were crystallinity [14,20]. But reducing the crystal size may be considered as another way towards disorder, which seems favorable as a detector.…”