Single crystalline SiGe layers on Si by solid phase epitaxy

Lieten, Ruben; McCallum, Jeffrey C.; Johnson, Brett C.

doi:10.1016/j.jcrysgro.2015.01.012

Cited by 7 publications

(7 citation statements)

References 32 publications

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“…As stated in ref. 51 the removal of the native oxide layer is critical in order to obtain successful SPER. However, it cannot be completely excluded that the detected impurities like O, Fe, C or Ar (sputter gas) may play a role of stabilization of the amorphous structure against SPER 52 , 53 .…”

Section: Resultsmentioning

confidence: 99%

In-situ Measurement of Self-Atom Diffusion in Solids Using Amorphous Germanium as a Model System

Hüger

Strauß

Stahn

et al. 2018

Sci Rep

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We present in-situ self-diffusion experiments in solids, which were carried out by Focussing Neutron Reflectometry on isotope multilayers. This new approach offers the following advantages in comparison to classical ex-situ measurements: (1) Identification and continuous measurement of a time dependence of diffusivities, (2) significant reduction of error limits of diffusivities, and (3) substantial reduction of the necessary experimental time. In the framework of a case study, yet unknown self-diffusivities in amorphous germanium are measured at various temperatures quasi-continuously, each during isothermal annealing. A significant decrease of diffusivities as a function of annealing time by one order of magnitude is detected that is attributed to structural relaxation accompanied by defect annihilation. In metastable equilibrium the diffusivities follow the Arrhenius law between 375 and 412 °C with an activation energy of Q = (2.11 ± 0.12) eV. The diffusivities are five orders of magnitude higher than in germanium single crystals at 400 °C, mainly due to the lower activation energy.

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Section: Resultsmentioning

confidence: 99%

In-situ Measurement of Self-Atom Diffusion in Solids Using Amorphous Germanium as a Model System

Hüger

Strauß

Stahn

et al. 2018

Sci Rep

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“…40) The high-temperature annealing treatment of the a-Ge film is similar to solid-phase crystallization (SPC). 21) Recrystallization and structural relaxation take place in the annealing process of the a-Ge film. [41][42][43] Ge atoms on the film surface have a large atomic mobility during the process of high-temperature annealing, which can roughen its surface.…”

Section: Growth Mechanismsmentioning

confidence: 99%

“…Fortunately, many methods involved in the low-temperature growth process have been put forward to achieve this goal, such as low-temperature=high-temperature two-step growth, [13][14][15] low-temperature epitaxial growth (LTE), [16][17][18][19] and solid-phase crystallization (SPC). 9,[20][21][22][23] It is reported that annealing or cyclic annealing can reduce the threading dislocation density of Ge films grown by the twostep growth technique so as to improve their optical and electric properties. 24) Recently, Liu et al 25) and Yeh et al 26) have also studied the effect of annealing on the crystalline Ge films grown at low temperature.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Feng

Xin

et al. 2016

Jpn. J. Appl. Phys.

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We investigate the microstructure and optical properties of Ge films on Si substrates prepared at low temperature by DC magnetron sputtering and the effect of in situ annealing on them. With increasing growth temperature, Ge films undergo a transition from amorphous to microcrystalline, then to polycrystalline. After annealing, these thin films transform into polycrystalline films with the (111) preferred orientation and identical crystal sizes. The surfaces of the amorphous and microcrystalline Ge films are severely coarsened, whereas the polycrystalline Ge film still displays a smooth surface. The growth mechanisms of Ge films with different crystalline phases in the annealing process are discussed, which can explain their morphology evolutions. Additionally, their infrared absorptions are enhanced after annealing, and this is useful for fabricating high-efficiency Si-based solar cells.

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“…The higher the Ge composition of the SiGe alloy epitaxial layer, the greater the mismatch rate with the substrate Si. The lattice mismatch on the one hand causes island-like growth, which increases the surface roughness of the high Ge composition SiGe epitaxial layer [6]. On the other hand, it causes high threading dislocation density (TDD) in the SiGe layer.…”

Section: Introductionmentioning

confidence: 99%

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Zhang

Song

Zhang

et al. 2018

Advances in Condensed Matter Physics

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The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field. However, due to the 4.2% lattice mismatch between Si and Ge, the epitaxial growth of the high-Ge-content SiGe epitaxial layer directly on the Si substrate has a high defect density, which will seriously affect the subsequent device performance. Laser recrystallization technique is a fast and low-cost method to effectively reduce threading dislocation density (TDD) in epitaxial high-Ge-content SiGe films on Si. In this paper, by means of finite element numerical simulation, a 808 nm laser recrystallization thermal physics model of a high-Ge-content SiGe film (for example, Si 0.2 Ge 0.8 ) on a Si substrate was established (temperature distribution physical model of Si 0.2 Ge 0.8 epitaxial layer under different laser power, Si 0.2 Ge 0.8 epitaxial layer thickness, and initial temperature). The results of this paper can provide important technical support for the preparation of high-quality high-Ge-content SiGe epilayers on Si substrates by laser recrystallization.

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Single crystalline SiGe layers on Si by solid phase epitaxy

Cited by 7 publications

References 32 publications

In-situ Measurement of Self-Atom Diffusion in Solids Using Amorphous Germanium as a Model System

In-situ Measurement of Self-Atom Diffusion in Solids Using Amorphous Germanium as a Model System

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

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