Single crystals of SiC and their application to blue LEDs

Koga, Kazuyuki; Yamaguchi, Takao

doi:10.1016/0960-8974(92)90021-h

Cited by 35 publications

(12 citation statements)

References 19 publications

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“…We take a brief look at material that is used for commercial blue LEDs, namely, Sic. Crystallographically, S i c has a polytype structure with a variety of packing orders between Si and C (18). It also has an indirect energy band structure very similar to that of Si.…”

Section: Luminescence Through Impurities In Siliconmentioning

confidence: 91%

Light Emission from Silicon

Iyer¹,

Xie²

1993

Science

323

150

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The possibility induction of light emission from silicon, an indirect bandgap material in which radiative transitions are unlikely, raises several interesting and technologically important possibilities, especially the fabrication of a truly integrated optoelectronic microchip. In this article, the natural considerations that constrain silicon from emitting light efficiently are examined, as are several engineered solutions to this limitation. These include intrinsic and alloy-induced luminescence; radiatively active impurities; quantum-confined structures, including zone folding and the recent developments in porous silicon; and a hybrid approach, the integration of direct bandgap materials onto silicon.

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Section: Luminescence Through Impurities In Siliconmentioning

confidence: 91%

Light Emission from Silicon

Iyer¹,

Xie²

1993

Science

323

150

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“…The brightness of SiC blue LEDs is only between 10 mcd and 20 mcd because of the indirect bandgap of this material. 6 On green LEDs, the external quantum efficiency of conventional, green GaP LEDs is only 0.1% due to the indirect bandgap of this material. The peak wavelength is 555 nm (yellowish green).…”

Section: Introductionmentioning

confidence: 99%

Blue-Green Light-Emitting Diodes and Violet Laser Diodes

Nakamura¹

1997

MRS Bull.

182

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Short-wavelength-emitting devices, such as blue laser diodes (LDs) and light-emitting diodes (LEDs), are currently sought for a number of applications, including full-color electroluminescent displays, laser printers, read-write laser sources for high-density information storage on magnetic and optical media, and sources for undersea optical communications. For these purposes, II–VI materials such as ZnSe and SiC, and III–V-nitride semiconductors such as GaN have been investigated intensively for a long time. However it was impossible to obtain high-brightness (over 1 cd) blue LEDs and reliable LDs. Much progress has been achieved recently on green LEDs and LDs using II–VI-based materials. The short lifetimes prevent II–VI-based devices from commercialization at present. The short lifetime of these II-VI-based devices may be caused by the crystal defects at a density of 103/cm2 because one crystal defect would cause the propagation of other defects leading to failure of the devices. Another wide-bandgap material for blue LEDs is SiC. The brightness of SiC blue LEDs is only between 10 mcd and 20 mcd because of the indirect bandgap of this material.On green LEDs, the external quantum efficiency of conventional, green GaP LEDs is only 0.1% due to the indirect bandgap of this material. The peak wavelength is 555 nm (yellowish green). As another material for green emission devices, AlInGaP has been used. The present performance of green AlInGaP LEDs is an emission wavelength of 570 nm (yellowish green) and maximum external quantum efficiency of 1%.

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“…[1][2][3][4][5][6][7][8][9] The wide bandgap of SiC results in a low leakage current even at high temperature. However, at present, the production of reasonable size and quality SiC single crystals is limited to a few industrial entities worldwide.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of physical vapor transport system for the growth of SiC crystals

Dhanaraj

Dudley

et al. 2004

Review of Scientific Instruments

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A physical vapor transport (PVT) system has been designed and fabricated for growing SiC single crystals. Novel multisegmented graphite insulation has been used for improved heat containment in the hotzone. Numerical modeling was applied to obtain the temperature field inside the hotzone, which also helped in predicting various growth parameters. Single crystals of 6H SiC were grown by the modified Lely method using the PVT system developed in the laboratory. The grown crystals were subjected to preliminary characterization.

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Single crystals of SiC and their application to blue LEDs

Cited by 35 publications

References 19 publications

Light Emission from Silicon

Light Emission from Silicon

Blue-Green Light-Emitting Diodes and Violet Laser Diodes

Design and fabrication of physical vapor transport system for the growth of SiC crystals

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