Single-dopant band bending fluctuations in 
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 measured with electrostatic force microscopy

Cowie, Megan; Plougmann, Rikke; Schumacher, Zeno; Grütter, Peter

doi:10.1103/physrevmaterials.6.104002

Cited by 4 publications

(4 citation statements)

References 28 publications

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“…In general, , with V S and c S being the sample to ground voltage drop (also called surface potential) and capacitance, respectively. As reported in ref , V S is the voltage induced band bending. In the metallic limit (i.e., good screening), c S > > c T , V T = V , and .…”

Section: Resultsmentioning

confidence: 99%

Imaging the Quantum Capacitance of Strained MoS₂ Monolayers by Electrostatic Force Microscopy

Di Giorgio,

Blundo,

Basset

et al. 2024

ACS Nano

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We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS 2 ) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS 2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies f RF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at f RF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is noninvasive and nanoscale and can contribute to the investigation of time-and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.

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Section: Resultsmentioning

confidence: 99%

Imaging the Quantum Capacitance of Strained MoS₂ Monolayers by Electrostatic Force Microscopy

Di Giorgio,

Blundo,

Basset

et al. 2024

ACS Nano

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“…Kelvin probe force microscopy (KPFM) reflects the local work function difference among surface structures; the charge distribution on the semiconductor surface can be revealed [25][26][27][28][29]. The combination of NC-AFM and KPFM is wildly used to investigate charge transport on semiconductor surfaces [30][31][32][33][34][35][36][37]. Kelvin probe force spectroscopy (KPFS) is based on AFM and KPFM, which can be used to identify the charge state and control the charge transfer [32,33].…”

Section: Introductionmentioning

confidence: 99%

“…Kelvin probe force spectroscopy (KPFS) is based on AFM and KPFM, which can be used to identify the charge state and control the charge transfer [32,33]. The KPFS method has been applied to identify dopants, defects, and dangling bonds, among others [34][35][36][37]. Schwarz et al obtained the distribution of doped atoms on a gallium arsenide (InAs)(110) surface on the basis of AFM findings, and the bias spectroscopy shows a nonparabolic property on the dopant site, revealing the accumulation, depletion, and reversion layers on the semiconductor [34].…”

Section: Introductionmentioning

confidence: 99%

“…Schwarz et al obtained the distribution of doped atoms on a gallium arsenide (InAs)(110) surface on the basis of AFM findings, and the bias spectroscopy shows a nonparabolic property on the dopant site, revealing the accumulation, depletion, and reversion layers on the semiconductor [34]. More recently, Schumacher et al have used this method to identify the properties of a pentacene/perylenetetracarboxylic diimide organic semiconductor [36,37]. The calculation of surface potential energy shift as a function of the applied bias of aluminum (Al) clusters on the Si(111)-7 × 7 surface also proves that the response to the applied bias on semiconductor surfaces is critical to the evaluation of semiconductor materials [38].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of semiconductor properties of Co/Si(111)-7 × 7 by AFM/KPFS

Sugawara

2023

J. Phys.: Condens. Matter

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Studies of the physics underlying carrier transport characteristics and band bending of semiconductors are critical for developing new types of devices. In this work, we investigated the physical properties of Co ring-like cluster (RC) reconstruction with a low Co coverage on a Si(111)-7×7 surface at atomic resolution by atomic force microscopy/Kelvin probe force microscopy at 78 K. We compared the applied bias dependence of frequency shift between two types of structure: Si(111)-7×7 and Co-RC reconstructions. As a result, the accumulation, depletion, and reversion layers were identified in the Co-RC reconstruction by bias spectroscopy. For the first time, we found that Co-RC reconstruction on the Si(111)-7×7 surface shows semiconductor properties by Kelvin probe force spectroscopy. The findings of this study are useful for developing new materials for semiconductor devices.

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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO ₂ interface

Cowie,

Constantinou,

Curson

et al. 2024

Proc. Natl. Acad. Sci. U.S.A.

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We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO 2 interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a 1 / f power spectral trend. Such individual defect fluctuations at the Si/SiO 2 interface impair the performance and reliability of nanoscale semiconductor devices and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss.

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Single-dopant band bending fluctuations in MoSe2 measured with electrostatic force microscopy

Cited by 4 publications

References 28 publications

Imaging the Quantum Capacitance of Strained MoS₂ Monolayers by Electrostatic Force Microscopy

Imaging the Quantum Capacitance of Strained MoS₂ Monolayers by Electrostatic Force Microscopy

Investigation of semiconductor properties of Co/Si(111)-7 × 7 by AFM/KPFS

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO ₂ interface

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Single-dopant band bending fluctuations in MoSe2 measured with electrostatic force microscopy

Cited by 4 publications

References 28 publications

Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy

Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy

Investigation of semiconductor properties of Co/Si(111)-7 × 7 by AFM/KPFS

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO 2 interface

Contact Info

Product

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Imaging the Quantum Capacitance of Strained MoS₂ Monolayers by Electrostatic Force Microscopy

Imaging the Quantum Capacitance of Strained MoS₂ Monolayers by Electrostatic Force Microscopy

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO ₂ interface