1989
DOI: 10.1209/0295-5075/10/8/011
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Single-Electron Effects in Arrays of Normal Tunnel Junctions

Abstract: We study the current-voltage characteristic of a current biased array of normal tunnel junctions with small capacitance, 8/2C > kB T. It shows a Coulomb gap, which is found to scale with the number of junctions in series and to be independent of the number of junctions in parallel. The probability of single-electron tunnelling (SET) depends on the energy difference before and after the transition. This makes the Coulomb gap depend strongly on the size of the region probed by the electron in the tunnelling proc… Show more

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Cited by 81 publications
(52 citation statements)
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“…The inter-particle charge transport is a stochastic process in which tunneling of an electron between nodes i → j at time t is governed by the probability distribution p ij (t) = Γ ij exp(−Γ ij t), with the tunneling rate [11,10] …”
Section: Tunneling Implementationmentioning
confidence: 99%
See 1 more Smart Citation
“…The inter-particle charge transport is a stochastic process in which tunneling of an electron between nodes i → j at time t is governed by the probability distribution p ij (t) = Γ ij exp(−Γ ij t), with the tunneling rate [11,10] …”
Section: Tunneling Implementationmentioning
confidence: 99%
“…It has been recognized that the physical properties of these nano-particle arrays and thin films depend on the mutual positions of the nano-particles and global characteristics of the structure [9]. In particular, enhanced non-linear conduction properties have been observed in certain structures of nano-particles [10,11,12,13,14,15].…”
Section: Introductionmentioning
confidence: 99%
“…The latter naturally occur because of the resonant Andreev processes occurring in the TP sequence, and lead to a system of Bloch-like equations [37]. The derivation is inspired by the work of Gurvitz [38,39] who treated the cases of single and double-dot systems. The generalization starts from an effective Hamiltonian, which is the sum of the Andreev pair Hamiltonian and the one-electron injection/detection terms as in Eq.…”
Section: Calculation Of the Teleportation Currentmentioning
confidence: 99%
“…Especially the geometry of the array plays a major role since it is intended to design the electron transport properties by controlling the shape of the device. From existing studies of arrays of metallic nanoparticles with small capacitances and high junction resistances 10,11,12,13,14,15,16 it is known that such systems exhibit nonlinear current-voltage characteristics -also called IV characteristics -which can be used for inter- Wireframe of a typical considered geometry. Adopting the capacitance model we assume that gate, leads and nanoparticles are ideal conductors while the other parts of the system are modelled as dielectrics.…”
mentioning
confidence: 99%