Single-electron injections in fringing-field-induced charge-trapping memories

Non-overlapped implantation (NOI) MOSFET synapse and its implementation on supervised neural network

“…NOI MOSFETs are known for their applicability in various nonvolatile memory (NVM) functions [1][2][3][4][5][6]. These devices can be operated as mask ROMs, EEPROMs or anti-fuses by using pure logic processing.…”

“…These novel NOI devices not only provide high density non-volatile memory solutions in standard CMOS processing but also give a flexible choice among mask ROM, anti-fuse and EEPROM functions. Furthermore, the potentials of the NOI devices for single electron operations have also been proven in [2]. The trapped charges causing the channel current reduction through the fringing capacitance of the NOI are studied and the drain current shifts to as high as 0.3 nA, which can be attributed to single-electron injection.…”

Comprehensive study of hole injection in non-overlapped implantation n-type MOSFETs

“…10,11) Among them, the spacer-trapping n-type MOSFET with gate-to-source/drain non-overlapped implantation (NOI) has been studied in terms of electrically erasable programmable read-only memory (EEPROM)/ mask read-only memory (MaskROM)/antifuse operations, cycling, retention, scaling, and electron distribution. [11][12][13][14][15] NOI MOSFETs are fully compatible with industrial CMOS fabrications even without modifying the process or increasing mask tooling cost. Stored electrons are trapped in the silicon nitride spacer by channel hot electron injection (CHEI) in the NOI channel near the drain junction.…”

“…Although electron injection and distribution in NOI devices have been well characterized, hole injection in NOI devices requires further study since NOI devices still face the same challenges as SONOS devices do. 13,15) In this study, we elucidate the erasing characteristics of the NOI device in terms of its physical mechanisms, injection probability, and injected hole distribution.…”