Single Electron Transistor-Based Gas Sensing With Tungsten Nanoparticles at Room Temperature

Flexible and Transparent WO3 Transistor with Electrical and Optical Modulation

“…In fact, it is well known that most organic semiconductors suffer from severe sensitivity to moisture and oxygen as well as from intrinsic degradation phenomena (e.g., ions/impurities diffusion), deteriorating their properties over time even if complex encapsulation schemes are employed. [ 24,25 ] Nonetheless, it also fi nds applications in other fi elds of electronics and electrochemistry such as gas sensing in single electron transistors, [ 26 ] sensitive layer in ion-sensitive fi eld-effect transistors (ISFETs), [ 27 ] or even as high-κ dielectric in transparent FETs. [ 21 ] On the other hand, inorganic semiconductors processed under optimized conditions (i.e., with proper deposition parameters and stoichiometry) can be quite stable over time, even without any encapsulation layer.…”

Single electron transistor: energy-level broadening effect and thermionic contribution

“…The tunneling rate from the source to the drain was calculated according to the orthodox theory and the tunnelling resistance. A lot of approximations are used [10][11][12][13][14][15] to improve our model. For that, we have considered a system with a double-junction.…”

“…Different materials have been used to realize SET devices such as metals [4], semiconductors [5], carbon nanotubes, [6], graphene [7] and single molecules [8,9]. Furthermore, SET device has been performed to obey many required applications such as logic device [10], radio−frequency [11], gas sensor [12] and single electron memory [13]. The investigated device operates on the principle of Coulomb blockade [14], which is more prominent at nanoscale.…”

A Modified Nanoelectronic Winner-Take-All Circuit for Room Temperature Operation

“…4 Specifically, competitive nets, like winner-take-all (WTA), provide easiness of operation due to their non-supervised training. 5 Although single-electron devices operating at room temperature have already been built, [6][7][8][9] it is still a challenge to propose, simulate and build more complex single-electron circuits operating properly at 300 K. 10,11 For example, a SET-WTA circuit has already been proposed. [12][13][14] This circuit was simulated for static inputs and was robust against effects such as offset charges.…”