Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays

Chen, Rui; Liang, Ya-Nan; Han, Jian-Wei; Wang, Xuan; Yang, Han; Chen, Qian; Yuan, Run-Jie; Ma, Ying-Qi; Shangguan, Shi-Peng; ,; ,

doi:10.7498/aps.70.20202028

Cited by 3 publications

(1 citation statement)

References 15 publications

(3 reference statements)

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“…因此对于空间环境中应用的HEMT器件, 研究其电子辐照效应显得尤为重要. 近年来, 国外众多研究团队纷纷报道了辐照对各种HEMT器件的影响, 其中辐照源包括质子、电子、中子、 g 射线、a 粒子等, HEMT器件主要包括GaAs HEMT [10] , GaN HEMT [11] , InP HEMT [12] ,…”

Section: 但是随着Hemt射频器件在空间环境中应unclassified

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

Zhou¹,

Ren-Feng²,

Yan-Feng³

et al. 2022

Acta Phys. Sin.

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In order to improve the radiation-resistance ability of the InP based high electron mobility transistor (InP HEMT) by optimizing the epitaxial structure design, a series of InP HEMT epitaxial structure materials with different structure parameters is grown by gas source molecular beam epitaxy. These samples are irradiated at room temperature by a 1.5-MeV electron beam at the same irradiation fluence of 2 × 10<sup>15</sup> cm<sup>–2</sup>. The electrical properties of the two-dimensional electron gas (2DEG) for InP HEMT epitaxial materials before and after irradiation are measured by Hall measurements to obtain the changes of the normalized 2DEG density and electron mobility along with the epitaxial structure parameters. The relation between 2DEG radiation damage and epitaxial structure parameters (such as Si-δ-doping density, spacer thickness, channel thickness and channel In content) of InP HEMT epitaxial structure materials is analyzed. The results show that the 2DEG of the InP HEMT epitaxial structure material with higher Si-δ-doping density, thinner spacer thickness, thicker channel thickness and lower channel In content has lower radiation damage, which possesses the stronger radiation-resistance ability.

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Section: 但是随着Hemt射频器件在空间环境中应unclassified

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

Zhou¹,

Ren-Feng²,

Yan-Feng³

et al. 2022

Acta Phys. Sin.

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A modular model for reliability analysis model of PMS with multiple K/N subsystems and mixed shocks

Wang,

Li,

Xiong

2024

Quality & Reliability Eng

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In this article, a modular model is proposed for the reliability modeling of phased mission systems (PMSs) with complicated system behaviors. By the modular method, the system is divided into several levels: system, subsystem, and components. At the component level, the shock effect, including self‐degradation, additional wear and damage caused by shocks, is considered and the component reliability is evaluated. Then, the reliability modeling method of the K/N system consisting of multiple K/N subsystems is proposed, by a mathematics reasoning method. The correctness of the proposed method is also verified by a Monte Carlo (MC) simulation procedure. At last, the modular method is applied at the system level, and the reliability of a practical engineering case, the attitude and orbit control system (AOCS), is evaluated for illustration. Meanwhile, the parameter sensitivity analysis is also carried out for implementation.

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Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Zhang,

Cao,

Chen

et al. 2024

Micromachines

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GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate Cascode GaN power devices by heavy ion accelerator experimental device. The differences of SEE under three conditions: pre-applied electrical stress, different LET values, and gate voltages are studied, and the related damage mechanism is discussed. The experimental results show that the pre-application of electrical stress before radiation leads to an electron de-trapping effect, generating defects within the GaN device. These defects will assist in charge collection so that the drain leakage current of the device will be enhanced. The higher the LET value, the more electron–hole pairs are ionized. Therefore, the charge collected by the drain increases, and the burn-out voltage advances. In the off state, the more negative the gate voltage, the higher the drain voltage of the GaN HEMT device, and the more serious the back-channel effect. This study provides an important theoretical basis for the reliability of GaN power devices in radiation environments.

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Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays

Cited by 3 publications

References 15 publications

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

A modular model for reliability analysis model of PMS with multiple K/N subsystems and mixed shocks

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

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