Single-Event Effect Performance of a Commercial Embedded ReRAM

Chen, Dakai; Kim, Hak; Phan, Anthony; Wilcox, Edward P.; LaBel, Kenneth A.; Büchner, S.; Khachatrian, Ani; Roche, N.

doi:10.1109/tns.2014.2361488

Cited by 40 publications

(13 citation statements)

References 20 publications

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“…This was consistent with an investigation of SEE in the commercially available Panasonic ReRAMbased microcontroller product reported by Chen et al [116]. In this work, the microcontroller was subject to heavy ions (using the Texas A&M University Cyclotron) and laser pulses [116]. No static memory bit flips were observed under either case, with ion LET as high as 70 MeV • cm 2 /mg.…”

Section: A Stt Magnetic Memorysupporting

confidence: 90%

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

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Section: A Stt Magnetic Memorysupporting

confidence: 90%

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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“…We determined that SEFI can be triggered from strikes on the Bandgap Reference circuits, Static Random Access Memory (SRAM), and logic circuits. Strikes on the sense amplifier circuits did not lead to upsets, contrary to a previous investigation on another resistive memory device [15]. The metallization overlayers and the residue on the surface of the die likely obstructed the pulsed laser from fully penetrating these sensitive regions.…”

Section: Single Event Upsetcontrasting

confidence: 69%

“…Other studies suggest that single-event upset (SEU) at the cell level can occur, due to upset of the access transistor [16]−[17]. We previously investigated the SEE performance of a microcontroller with embedded reduction-oxidation memory [15]. There is yet to be a comprehensive SEE evaluation of a stand-alone resistive memory product.…”

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confidence: 99%

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

Chen

Wilcox

Berg

et al. 2015

IEEE Trans. Nucl. Sci.

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Conductive-bridge random access memory (CBRAM) is a programmable metallization cell (PMC) memory in the family of resistive memories [1]−[4]. The scaling limitations of flash spurred the introduction of alternative non-volatile memory technologies. The CBRAM has shown advantages in performance and scalability relative to other alternative non-volatile memory technologies [2]. Additionally, the resistive elements can be fabricated back-end-of-line (BEOL) on CMOS processes [1]. Therefore, it can be more easily integrated into existing CMOS wafer fabrication lines. The rapid development in resistive memories has expedited the release of commercial-ready products. The CBRAM from Adesto Technologies is an electrically erasable programmable read-only memory (EEPROM) [1], [4]−[5].The CBRAM offers a promising alternative to traditional chargetrap or floating-gate technologies for space applications, due to its intrinsic radiation tolerance. Previous studies found that the Adesto CBRAM EEPROM is error free up to 450 krad(GeS 2 ) of gamma rays, and up to 3 Mrad(CaF 2 ) of 10 keV x-rays [13]−[14]. The device is also hardened against displacement damage up to 10 14 n/cm 2 of 1 MeV equivalent neutrons [14]. Other studies suggest that single-event upset (SEU) at the cell level can occur, due to upset of the access transistor [16]−[17]. We previously investigated the SEE performance of a microcontroller with embedded reduction-oxidation memory [15]. There is yet to be a comprehensive SEE evaluation of a stand-alone resistive memory product. Here, we investigate the SEE susceptibility of a commercial EEPROM, the first stand-alone memory based on CBRAM technology.

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“…Resistance random access memory (ReRAM) is considered a promising candidate for both embedded and stand-alone nonvolatile memory because of its high speed [1], low power consumption [2], and good reliability on endurance [3], retention [4], and radiation hardness [5]. As the first commercial product, we have started the mass production of 180-nm embedded 1T1R ReRAM in 2013 [6].…”

Section: Introductionmentioning

confidence: 99%

A new prediction method for ReRAM data retention statistics based on 3D filament structures

Wei

Kawasaki

Muraoka

et al. 2015

2015 IEEE International Reliability Physics Symposium

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Instead of wide distributed resistance for a single bit, we introduce non-fluctuating physical parameters, filament diameter and packing factor (corresponding to oxygen vacancy concentration) to describe ReRAM bit. The quantitative 3D percolation model is developed based on direct observation of the filament structure and hopping conduction, which is confirmed with ultra-low temperature (30 K) measurement. Moreover, we provide a simulation method to obtain quantitative filament diameter, packing factor and to do the prediction of the resistance distribution after retention, which is verified with experiment.

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Single-Event Effect Performance of a Commercial Embedded ReRAM

Cited by 40 publications

References 20 publications

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

A new prediction method for ReRAM data retention statistics based on 3D filament structures

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