Single Event Upset of Dynamic Rams by Neutrons and Protons

Guenzer, C. S.; Wolicki, E. A.; Allas, R.G.

doi:10.1109/tns.1979.4330270

Cited by 119 publications

(41 citation statements)

References 8 publications

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“…The term soft error was used to differentiate from the repeatable errors traceable to permanent hardware faults. Guenzer and Wolicki [10] reported that the error causing particles came not only from uranium and thorium but that nuclear reactions generated high energy neutrons and protons, which could also cause upsets in circuits. Because the title of their paper was "Single Event Upset of Dynamic RAMs by Neutrons and Protons", the term "SEU" has been in use ever since [10] (refer to [16]).…”

Section: Historical Notesmentioning

confidence: 99%

“…Guenzer and Wolicki [10] reported that the error causing particles came not only from uranium and thorium but that nuclear reactions generated high energy neutrons and protons, which could also cause upsets in circuits. Because the title of their paper was "Single Event Upset of Dynamic RAMs by Neutrons and Protons", the term "SEU" has been in use ever since [10] (refer to [16]). In 1979, Ziegler and Lanford from IBM [28] predicted that cosmic rays could [1] shows a significant and growing risk of functional failures due to the corruption of configuration data, especially when the system has higher densities.…”

Section: Historical Notesmentioning

confidence: 99%

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Single Event Upset: An Embedded Tutorial

Wang

Agrawal

2008

21st International Conference on VLSI Design (VLSID 2008)

144

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Abstract-With the continuous downscaling of CMOS technologies, the reliability has become a major bottleneck in the evolution of the next generation systems. Technology trends such as transistor down-sizing, use of new materials, and system on chip architectures continue to increase the sensitivity of systems to soft errors. These errors are random and not related to permanent hardware faults. Their causes may be internal (e.g., interconnect coupling) or external (e.g., cosmic radiation). To meet the system reliability requirements it is necessary for both the circuit designers and test engineers to get the basic knowledge of the soft errors. We present a tutorial study of the radiation-induced single event upset phenomenon caused by external radiation, which is a major source of soft errors. We summarize basic radiation mechanisms and the resulting soft errors in silicon. Soft error mitigation techniques with time and space redundancy are illustrated. An industrial design example, the IBM z990 system, shows how the industry is dealing with soft errors these days.

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Section: Historical Notesmentioning

confidence: 99%

Section: Historical Notesmentioning

confidence: 99%

Single Event Upset: An Embedded Tutorial

Wang

Agrawal

2008

21st International Conference on VLSI Design (VLSID 2008)

144

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“…The general Bendel two-parameter model has the form (8) where is a cross section at energy in units of 10 upsets per proton/cm per bit, is the maximum upset cross section, and (9) where and are in megaelectronvolts.…”

Section: ) Bendel Modelmentioning

confidence: 99%

“…They observed upsets occurring for protons energies ranging from 18 to 130 MeV. At the same time Guenzer et al [8] studied and reported on proton and neutron-induced effects. They observed SEUs in 16k DRAMs for neutron energies that ranged from 6.5 to 14 MeV and for 35 MeV protons.…”

Section: Introductionmentioning

confidence: 96%

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

Reed

Kinnison

Pickel

et al. 2003

IEEE Trans. Nucl. Sci.

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Abstract-Over the past 27 years, or so, increased concern over single-event effects (SEEs) in spacecraft systems has resulted in research, development, and engineering activities centered around a better understanding of the space radiation environment, SEE predictive methods, ground test protocols, and test facility developments. This research has led to fairly well developed methods for assessing the impact of the space radiation environment on systems that contain SEE sensitive devices and the development of mitigation strategies either at the system or device level. However, as new technology has emerged, these ground test and predictive methods have certain short falls.

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“…In 1979, it was predicted that the secondary particles created in interactions of cosmic rays with the atmosphere could cause soft errors in ground-based electronics [5]. In the same year, errors due to neutrons and protons were observed in laboratory conditions [6]. An error due to a hit of a single particle was termed a single event upset (SEU).…”

Section: Introductionmentioning

confidence: 99%

Characterization of soft errors caused by single event upsets in CMOS processes

Karnik

Hazucha

2004

IEEE Trans.Dependable and Secure Comput.

447

211

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Abstract-Radiation-induced single event upsets (SEUs) pose a major challenge for the design of memories and logic circuits in highperformance microprocessors in technologies beyond 90nm. Historically, we have considered power-performance-area trade offs. There is a need to include the soft error rate (SER) as another design parameter. In this paper, we present radiation particle interactions with silicon, charge collection effects, soft errors, and their effect on VLSI circuits. We also discuss the impact of SEUs on system reliability. We describe an accelerated measurement of SERs using a high-intensity neutron beam, the characterization of SERs in sequential logic cells, and technology scaling trends. Finally, some directions for future research are given.

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Single Event Upset of Dynamic Rams by Neutrons and Protons

Cited by 119 publications

References 8 publications

Single Event Upset: An Embedded Tutorial

Single Event Upset: An Embedded Tutorial

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

Characterization of soft errors caused by single event upsets in CMOS processes

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