Single-expose patterning development for EUV lithography

Silva, Anuja De; Petrillo, Karen; Meli, Luciana; Shearer, Jeffrey C.; Beique, Genevieve; Sun, Lei; Seshadri, Indira; Oh, Tae-Hwan; Han, Seulgi; Saulnier, Nicole; Lee, Joe; Arnold, John; Hamieh, Bassem; Felix, Nelson; Furukawa, T.; Singh, Lovejeet; Ayothi, Ramakrishnan

doi:10.1117/12.2261216

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…The wafers were exposed to 13.5 nm radiation on an ASML NXE3400B scanner with pitch 36 nm L/S mask using a 20.25 nm mask opening. 3 The exposed wafers were post-exposure baked (PEB) at 100°C for 60 seconds, developed with a 0.26N TMAH solution for 60 seconds, then rinsed with deionized water (DIW) and spun dried to form the desired patterns.…”

Section: Euv Photoresist Litho Patterning Evaluationmentioning

confidence: 99%

“…Herein a series of model EUV photoresists with different polymer chemistry using otherwise identical components were compared by EUV litho patterning and ADI defect inspection using a low NA (0.33 NA) ASML NXE3400B scanner with a 20.25 nm mask trench opening at a 36 nm pitch. 3,4 The photoresist polymers evaluated spanned a range of molecular weights, polydispersity, and differed with regards to polymer hydrophobicity. The trends in defect levels at various CDs were compared against the trends in polymer hydrophobicity and molecular weight.…”

Section: Introductionmentioning

confidence: 99%

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Identifying trends in photoresist polymer properties to improve line and space defects

Rafael-Naab,

Park,

Aqad

et al. 2024

Advances in Patterning Materials and Processes XLI

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The drive toward tighter pitch and higher density integrated circuits requires continual advancement in lithography. Advanced photolithography tools use extreme ultraviolet (EUV) light with a wavelength of 13.5 nm. The high energy nature of EUV light generates secondary electrons in the photoresist that are responsible for the photochemistry that induces the solubility switch. This distinct mechanism has provided the driving force for the development of new photoresists that are sensitive to EUV and highly reactive toward secondary electrons. 1,2 Despite the considerable change in acid generation mechanism going from DUV to EUV, chemically amplified photoresists continue to be leading photoresist candidates for new process nodes at low NA EUV (0.33 NA) and their use is expected to extend into early high NA (0.55 NA). Herein the after-developer defects (ADI) and EUV P36 LS trench printing performance of a series of chemically amplified photoresists (CAR) with distinct chemistry developed specifically for EUV lithography are compared. In particular, the relationship of different leaving group chemistries and polymer manufacturing processes on stochastic defectivity is explored as well as the connection to photoresist polymer hydrophobicity and homogeneity. The insights gained from this study guide design strategies for improvement of advanced chemically amplified photoresists for EUV lithography.

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Section: Euv Photoresist Litho Patterning Evaluationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Identifying trends in photoresist polymer properties to improve line and space defects

Rafael-Naab,

Park,

Aqad

et al. 2024

Advances in Patterning Materials and Processes XLI

View full text Add to dashboard Cite

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“…The current semiconductor industry is focused on overcoming the limitations of highly complex process steps such as litho-etch-litho-etch (LELE), self-aligned double patterning (SADP), and self-aligned quadruple patterning (SAQP) through the adoption of single exposure extreme ultraviolet (EUV) lithography, aiming to save process costs and time while achieving reductions in pattern scale and critical dimension (CD) 1,2 . Upon the integration of EUV lithography, the semiconductor industry is experiencing rapid innovation and expansion in advanced semiconductor technology; however, it is facing a strong awareness of the severe climate crisis and ecological destruction caused by this advancement 3 .…”

Section: Introductionmentioning

confidence: 99%

Light-curable underlayers for non-baking process in EUV lithography

Baek,

Heo,

Vandereyken

et al. 2024

Advances in Patterning Materials and Processes XLI

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Underlayer materials account for the majority of electricity consumption in the lithography process because all tracks need to maintain a high temperature not only during the process time but also throughout the entire operational period. In this study, we propose a novel method that deviates from the conventional approach of utilizing thermoplastic materials as the underlayers for crosslinking, instead advocating for the use of light source for the crosslinking process, which potentially leads to reduced electricity consumption. Furthermore, some studies have shown that light-curable materials exhibit a higher degree of crosslinking compared to thermally cured materials, which implies that better crosslinking may provide better lithography performance. We evaluated light-curable materials based on the thermoplastic underlayers used in conventional EUV lithography.

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