Single fundamental mode photonic crystal vertical cavity laser with improved output power

Danner, Aaron J.; Kim, T. S.; Choquette, Kent D.

doi:10.1049/el:20057841

Cited by 56 publications

(26 citation statements)

References 8 publications

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“…These devices have strong potential for leaving laboratories into the market due to their unique properties, which make them a perfect choice for many applications. These properties include a stable single-mode operation [1,2,3], high-speed modulation [4,5,6] and polarization control [7,8]. Typical PC-VCSELs consist of a classical VCSEL cavity surrounded by Distributed Bragg Reflectors (DBRs) of high reflectivity, with lateral photonic crystal structure which provides lateral light confinement.…”

Section: Introductionmentioning

confidence: 99%

Numerical Methods for modeling Photonic-Crystal VCSELs

Dems¹,

Chung²,

Nyakas³

et al. 2010

Opt. Express

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We show comparison of four different numerical methods for simulating Photonic-Crystal (PC) VCSELs. We present the theoretical basis behind each method and analyze the differences by studying a benchmark VCSEL structure, where the PC structure penetrates all VCSEL layers, the entire top-mirror DBR, a fraction of the top-mirror DBR or just the VCSEL cavity. The different models are evaluated by comparing the predicted resonance wavelengths and threshold gains for different hole diameters and pitches of the PC. The agreement between the models is relatively good, except for one model, which corresponds to the effective index method. The simulation results elucidate the strength and weaknesses of the analyzed methods; and outline the limits of applicability of the different models.

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Section: Introductionmentioning

confidence: 99%

Numerical Methods for modeling Photonic-Crystal VCSELs

Dems¹,

Chung²,

Nyakas³

et al. 2010

Opt. Express

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“…4.11). GaAs-based PhC-VCSELs have reached a singlemode power of 3.1 mW (MSR > 30 dB) at 850 nm [39], 5.7 mW (MSR > 35 dB) at 990 nm [40] and 1.7 mW (MSR > 30 dB) at 1.3 µm [41]. A particular problem for such PhC-VCSELs is the increased optical loss and electrical resistance caused by the deep holes, leading to relatively high threshold currents and low power efficiency.…”

Section: Inherently Single-mode Vcselsmentioning

confidence: 99%

Single-Mode VCSELs

Larsson

Gustavsson

2012

Springer Series in Optical Sciences

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The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot. Such beam properties are required in many applications. In this chapter, after discussing applications of single-mode VCSELs, we introduce the basics of fields and modes in VCSELs and review designs implemented for singlemode emission from VCSELs in different materials and at different wavelengths. This includes VCSELs that are inherently single-mode as well as inherently multimode VCSELs where higher-order modes are suppressed by mode selective gain or loss. In each case we present the current state-of-the-art and discuss pros and cons. At the end, a specific example with experimental results is provided and, as a summary, the most promising designs based on current technologies are identified. IntroductionThe vertical-cavity surface-emitting laser (VCSEL) is an attractive light source for an expanding range of applications. Due to low cost manufacturing, low power consumption, simplified packaging, attractive beam properties (circular and low divergence beam) and excellent high-speed modulation characteristics at low currents, it has replaced the edge-emitting laser in short-reach optical communication links

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“…The PhC VCSEL structure investigated here is defined by: R A = 4 μm, a/L = 0.5, which have been chosen to assure high modal gain [14] and clear discrimination between the fundamental and first order modes [15]. The ratio a/L = 0.5 has been assumed as the mean value used by other authors [5,6,[35][36][37][38] and has been found to lead to low lasing temperature [16]. The funneling of carriers and their uniformity in the active region is assured by a proton-implanted tunnel junction placed in the node position of the standing wave (Fig.…”

Section: The Model Our Multi-physical Model Comprises a Three-dimensimentioning

confidence: 99%

Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

Czyszanowski

Sarzała

Dems

et al. 2009

Physica Status Solidi (a)

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A self‐consistent electrical‐thermal‐optical‐gain modeling of threshold characteristics of an InP‐based 1300 nm AlInGaAs photonic‐crystal vertical‐cavity surface‐emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse‐mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Single fundamental mode photonic crystal vertical cavity laser with improved output power

Cited by 56 publications

References 8 publications

Numerical Methods for modeling Photonic-Crystal VCSELs

Numerical Methods for modeling Photonic-Crystal VCSELs

Single-Mode VCSELs

Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

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