2009
DOI: 10.1002/pssa.200824499
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Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

Abstract: A self‐consistent electrical‐thermal‐optical‐gain modeling of threshold characteristics of an InP‐based 1300 nm AlInGaAs photonic‐crystal vertical‐cavity surface‐emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse‐mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Cited by 15 publications
(18 citation statements)
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“…Therefore usually the simplest VCSEL structures should be recommended, including small−area devices, somewhat more advanced VCSELs using tunnel junctions and inverted−relief VCSELs. For very special applications requiring more stable and more efficient SFM VCSEL performance, various holey structures may be con− sidered including the most promising photonic−crystal VCSELs of possibilities still not fully discovered and exploited [62][63][64]. Even higher SFM output may be reached in VCSELs integrated with curved microlenses.…”
Section: Discussionmentioning
confidence: 99%
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“…Therefore usually the simplest VCSEL structures should be recommended, including small−area devices, somewhat more advanced VCSELs using tunnel junctions and inverted−relief VCSELs. For very special applications requiring more stable and more efficient SFM VCSEL performance, various holey structures may be con− sidered including the most promising photonic−crystal VCSELs of possibilities still not fully discovered and exploited [62][63][64]. Even higher SFM output may be reached in VCSELs integrated with curved microlenses.…”
Section: Discussionmentioning
confidence: 99%
“…The highest RT SFM output obtained in PC VCSELs equals 3.8 mW in the 10−μm device [58] emitting the 996−nm radiation and its lower RT threshold current was equal to only 0.9 mA (1.15 kA/cm 2 ). PC VCSELs are very promising devices potentially offering relatively high SFM outputs, but their development has just been started, so they need more time necessary for their modelling and structure optimization [62][63][64] to reach an essential improvement.…”
Section: Diffraction Lossesmentioning
confidence: 99%
“…Recently, a number of experimental [6][7][8] and theoreti− cal studies on PhC VCSELs have been presented [9][10][11][12][13][14][15], however, only in Refs. 10 and 14 the thermal effects taking part in the PhC VCSEL operation has been considered with a special care.…”
Section: Introductionmentioning
confidence: 99%
“…PhC region consists of air holes defined by lower thermal conductivity than semiconductor material. Deep etching hampers the heat transfer but also reduces the threshold current [15]. On the other hand, for shallow etch− ing, one gets rid of heat transport problem but there arises another one connected with light leakage through PhC holes [15].…”
Section: Introductionmentioning
confidence: 99%
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