Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

“…Among III-V nanowire photoconductors, narrow bandgap binary nanowire materials, such as InAs [11], GaSb [73], and InSb [74], can provide broadband photodetection spanning from visible (VIS) to IR regions. InAs nanowires have been demonstrated to have high carrier mobility, easy formation of ohmic contact, as well as excellent optoelectronic properties [11].…”

“…Moreover, core-shell heterostructures, such as InAs/AlSb core-shell [46], form a type-II bandgap alignment that further improves charge carrier separation, photosensivity, and photoresponse. Single GaSb nanowire photodetectors have also been fabricated on rigid SiO2/Si and flexible polyethylene terephthalate (PET) substrates with high responsivity and fast response coupled with stable photoswitching in a broad spectral range from ultraviolet (UV) to NIR [73]. Ternary III-V nanowires with tunable bandgaps, such as GaAsSb [9], InGaAs [77], and InAsP [78], have been also extensively studied.…”

Recent advances in Sb-based III–V nanowires

“…Moreover, due to the small dimensions and good compatibility with semiconductor technology, NWs-based photodetectors facilitate the further development of highly integrated and miniature devices, which are critical for realizing high-performance optoelectronic systems in the future [11]. As shown in figure 10(a), single GaSb NW photodetectors have been fabricated successfully by Luo et al on both rigid Si/SiO 2 substrate and flexible polyethylene terephthalate substrate, exhibiting high responsivity of 7350 AW under illumination of λ=350 nm and light intensity P=0.2 mW cm −2 [49]. Generally speaking, with a narrow bandgap and high mobility, Sb-based III-V NWs are the excellent candidates for high-performance IR detector with wide detection range, due to their stabilization, lower dielectric constant, lower room temperature self-diffusion coefficient and fairly weak dependence of the band edge on the composition.…”

“…Therefore, the 1D semiconductor NWs-based photodetectors facilitate highly integrated and miniature devices, showing the advantages of high responsivity, specific detectivity, fast response, high spectral selection, good flexibility, and low energy consumption [11,47,48]. In this case, both InSb and GaSb NWs have been demonstrated in the application of IR detectors in the past few years [12,49,50]. Notably, by adjusting the composition of ternary NWs, such as GaAs x Sb 1−x [51], GaIn x Sb 1−x [52] and InAs x Sb 1−x [53], their bandgap can be tuned continuously to cover the majority of infrared wavelength range.…”

A Fully Transparent and Flexible Ultraviolet–Visible Photodetector Based on Controlled Electrospun ZnO‐CdO Heterojunction Nanofiber Arrays

“…For example, In 2 Ge 2 O 7 (4.4 eV) and Ga 2 O 3 (4.9 eV) nanowires showed a good performance for detection in the deep ultraviolet; ZnO (3.4 eV), SnO 2 (3.6 eV), In 2 O 3 (3.6 eV), and Nb 2 O 5 (3.4 eV) nanowires are sensitive to ultraviolet light CdS (2.4 eV), ZnTe (2.4 eV), and In 2 S 3 (2.0 eV) nanowires work well in the visible spectral range and InAs (0.35 eV) and Cd 3 P 2 (0.65 eV) nanowires play a vital roles in near‐infrared light detection . Interestingly, these days, photodetectors with a broad spectral response have started to attract more and more attention because as such a “multicolor” response can be realized in a single photodetector . Currently, there are two ways to achieve such a response: one is to form an alloy, for instance (Al, In) x Ga (1‐ x ) N, which has a tunable response range from the near‐ultraviolet to near‐infrared light; another is to form hybrid structures, such as CdSe/ZnTe core–shell structures, ZnS/ZnO biaxial structures or quantum dots/organic mixtures, which combine the spectral response range of their constituting components.…”