Single β-Ga2O3 nanowire based lateral FinFET on Si

Abstract

A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/ f noise and 1/ f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/ f noise mechanism in the β-Ga2O3 FinFET in this work.

Effects of Annealing on Surface Residual Impurities and Intrinsic Defects of β-Ga2O3

“…β-Ga 2 O 3 shows a large bandgap (4.5-4.9 eV) and high breakdown electric field (~8 MV/cm) to produce a Baliga's figure of merit (BFOM) over 3000, which is much higher than SiC BFOM and GaN BFOM. As a result, β-Ga 2 O 3 is superior in power device applications, the performance of which can be conveniently modulated due to its good n-type doping controllability over a wide range of 10 15 -10 19 cm −3 [2][3][4][5]. Based on its ultra-wide bandgap, β-Ga 2 O 3 also demonstrates the exclusive potential for use in optoelectronic detection for solar-blind wavelength (<280 nm), which matches its bandgap well.…”

Single β-Ga2O3 nanowire back-gate field-effect transistor

“…This also indicates that the as-grown β-Ga 2 3 NWs have good crystal quality and low concentration defects. A detailed summary of the electrical performance of state-of-the-art depletion-mode β-Ga 2 O 3 nanostructure-based FETs reported in recent years can be found in table 1 [21,24,27,28,30,[43][44][45][46][47][48]. Physical properties of semiconductor materials will be affected by the surrounding environment, especially the temperature, which determines the performance of electronic devices at high temperatures.…”

“…At the same time, to scale down ultracompact electronic devices, 1D β-Ga 2 O 3 nanowires (NWs) could offer an option to be used as conducting channels. Since the NW has a larger specific surface area compared to bulk materials, which makes the contact between the gate/channel more adequate and may help to improve the modulation ability of the gate over the channel conductivity [2,20,21]. Moreover, strain-free epitaxy of β-Ga 2 O 3 NWs may benefit from fewer defects than thin films grown on hetero sapphire substrates.…”

One-Step Preparation of Si-Doped Ultra-Long β-Ga2O3 Nanowires by Low-Pressure Chemical Vapor Deposition

“…β-Ga 2 O 3 has been emerging an important wide bandgap (4.9 eV) semiconductor material [1][2][3][4][5][6], and has attracted much attention with its outstanding properties, including high breakdown field (~8 MV/cm) [7,8], high Baliga's figure of merit, which is 10 and 4 times higher than that of SiC and GaN [9,10], and thermal and mechanical stability [11][12][13][14]. These allow β-Ga 2 O 3 to be used in high-power, solar-blind ultraviolet photodetectors, and gas sensors [15,16].…”

“…These figures indicate that FET based β-Ga 2 O 3 nanowires have small dark currents and large switching ratios. Siyuan Xu et al [8] made a high preferment fin field-effect transistor (FinFET) based on β-Ga 2 O 3 nanowire on silicon substrate, and the switching ratio of their device reaches ~4 × 10 8 , and it has a relatively low subthreshold swing (~110 mV), The leakage current is only 4 fA and reaches the limit of the sensing system. The result shows that FinFET based on β-Ga 2 O 3 nanowires is comparable with the best reported β-Ga 2 O 3 nanowires based on homogeneous epitaxial films, showing the excellent performance of nanowire-based devices.…”