Single injection space-charge-limited current in insulator with two sets of distributed traps

Kumar, Mohan; Vashistha, G. K.; Sharma, Y. K.

doi:10.1051/epjap:2007136

Cited by 3 publications

(2 citation statements)

References 7 publications

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“…However, trap-assisted SCLC (TSCLC, I∝V n , n>2) [26][27][28] is found to be the best fit for our device except for initial low voltage region. Voltage, where the current density increases, is called the trap-filled limit and depends on the total traps density and thickness of the sample, not on the distribution of traps [29,30]. The current in our device is affected by shallow traps (slope >2) according the low-exponent SCLC [20,31].…”

Section: Resultsmentioning

confidence: 99%

Realization of synaptic learning and memory functions in Y₂O₃based memristive device fabricated by dual ion beam sputtering

et al. 2018

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Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous YO (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and 'learning behavior (LB)' are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An 'LB' function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective MIS structure would promote much cheaper synapse for artificial neural network.

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Section: Resultsmentioning

confidence: 99%

Realization of synaptic learning and memory functions in Y₂O₃based memristive device fabricated by dual ion beam sputtering

et al. 2018

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“…[16][17][18][19]. According to the space-charge-limited conduction theory the classical current density vs. electric field dependence has several regions that start with the Ohmic conduction (typically very low current levels), followed by a classical Child's square-law behavior or a Trap Filled Limit (TFL) regime, which is commonly followed by a square-law behavior.…”

Section: Discussionmentioning

confidence: 99%

Prebreakdown current and DC breakdown strength of alumina-filled poly(ethylene-co-butyl acrylate) nanocomposites: Part II - prebreakdown currents

Jaeverberg

Venkatesulu

Edin

et al. 2014

IEEE Trans. Dielect. Electr. Insul.

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Pre-breakdown currents through the poly (ethylene-co-butyl acrylate) (EBA) nanocomposites filled with spherical alumina particles were studied as a function of particle coating and moisture content. The nanocomposites were prepared from a mixture of EBA formulations (13 wt% butyl acrylate groups content) and alumina powder. Two kinds of alumina nanoparticles were used: NA (25 nm in diameter) and ND (45 nm in diameter). The particles were either unmodified or surface-treated with aminopropyltriethoxy silane or octyltriethoxy silane. Two different relative humidities of air were used for conditioning the samples prior to testing: 0 % RH (dry case) and 86 % RH (samples were saturated with moisture). The pre-breakdown current measurements were performed with a DC ramp of 1.2 kV/s. Twenty samples were tested for each material formulation -ten of which were tested in dry conditions and ten were tested after conditioning in humid environment. Results were compared to the reference unfilled EBA samples. The measured currents were analyzed under the assumption of space charge limited conduction. As expected, conditioning materials in humid environment caused an increase in pre-breakdown currents. This effect was more pronounced for nanocomposite materials, while the reference unfilled material was least affected.

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Enhanced Aramid/Al2O3 interfacial properties by PDDA modification for the preparation of composite insulating paper

Lü

Song

et al. 2022

Res Chem Intermed

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For further improve the electrical insulation properties of meta-aramid paper(PMIA), polydimethyldiallyl ammonium chloride (PDDA) was used for the modi cation of nano-Al 2 O 3 in this work. The modi ed products were characterized by means of transmission electron microscopy (TEM), Fourier transform infrared spectrometer (FTIR) and liquid Zeta potential. The original and PDDA modi ed nano-Al 2 O 3 was doped into the aramid ber composite, and the effects of PDDA and ller mass fraction on several properties such as electrical conductivity, breakdown strength and surface charge dissipation rate of insulating paper were studied. Finally, the interfacial properties of the composites were investigated using molecular dynamics (MD). The results showed that PDDA was successfully coated on the surface of nano-Al 2 O 3 , and its surface potential was changed from negative to positive, which could improve the interface characteristics between ller and matrix and enhance the dielectric strength of aramid paper. Besides, saturation effect of PDDA modi cation was observed, and when the amount of PDDA was 10% and the content of modi ed nano-Al 2 O 3 was 3%, the breakdown strength of aramid paper was increased by 20%, and the volume conductivity was decreased by 68%. The simulation result revealed that PDDA could improve the insulation performance of aramid paper by reducing the interfacial binding energy between aramid and ller.

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Single injection space-charge-limited current in insulator with two sets of distributed traps

Cited by 3 publications

References 7 publications

Realization of synaptic learning and memory functions in Y₂O₃based memristive device fabricated by dual ion beam sputtering

Realization of synaptic learning and memory functions in Y₂O₃based memristive device fabricated by dual ion beam sputtering

Prebreakdown current and DC breakdown strength of alumina-filled poly(ethylene-co-butyl acrylate) nanocomposites: Part II - prebreakdown currents

Enhanced Aramid/Al2O3 interfacial properties by PDDA modification for the preparation of composite insulating paper

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Single injection space-charge-limited current in insulator with two sets of distributed traps

Cited by 3 publications

References 7 publications

Realization of synaptic learning and memory functions in Y2O3based memristive device fabricated by dual ion beam sputtering

Realization of synaptic learning and memory functions in Y2O3based memristive device fabricated by dual ion beam sputtering

Prebreakdown current and DC breakdown strength of alumina-filled poly(ethylene-co-butyl acrylate) nanocomposites: Part II - prebreakdown currents

Enhanced Aramid/Al2O3 interfacial properties by PDDA modification for the preparation of composite insulating paper

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Realization of synaptic learning and memory functions in Y₂O₃based memristive device fabricated by dual ion beam sputtering

Realization of synaptic learning and memory functions in Y₂O₃based memristive device fabricated by dual ion beam sputtering