Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

We studied lateral silicon p-i-n junctions, doped with phosphorus and boron, regarding charge sensing feasibility. In order to examine the detection capabilities and underlying mechanism, we used in a complementary way two measurement techniques. First, we employed a semiconductor parameter analyzer to measure I−V characteristics at a low temperature, for reverse and forward bias conditions. In both regimes, we systematically detected Random Telegraph Signal. Secondly, using a Low Temperature Kelvin Probe Force Microscope, we measured surface electronic potentials. Both p-i-n junction interfaces, p-i and i-n, were observed as regions of a dynamic behaviour, with characteristic time-dependent electronic potential fluctuations. Those fluctuations are due to single charge capture/emission events. We found analytically that the obtained data could be explained by a model of twodimensional p-n junction and phosphorus-boron interaction at the edge of depletion region. The results of complementary measurements and analysis presented in this research, supported also by the previous reports, provide fundamental insight into the charge sensing mechanism utilizing emergence of individual dopants.

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“…In other words -by means of deterministic doping, e.g. using either ion implantation (SII) [29] or so called STM-Lithography [30].…”

Section: Future Stepsmentioning

confidence: 99%

Dopant-Based Charge Sensing Utilizing P-I-N Nanojunction

Nowak

Jabłoński

2017

Metrology and Measurement Systems

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“…For ultimate doping, single ion implantation has been developed based on a FIB setup for creating custom dopant distributions with approximately 60 nm placement precision with 60 kV doubly charged Si ions, and as a result, studies of ordered dopant arrays were reported [87,88]. Single ion implantation and its applications for FETs and quantum devices were reviewed recently [89,90]. In another specialized doping scheme, FIBs are applied for the lateral patterning of two-dimensional electron gases in heterostructures [91].…”

Section: Semiconductormentioning

confidence: 99%

Direct-Write Ion Beam Lithography

Joshi‐Imre

Bauerdick

2014

Journal of Nanotechnology

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Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIB-based manufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating three-dimensional patterns and shaping objects by milling and deposition is probably the most recognized feature of ion beam lithography (IBL) and micromachining. However, there exist several other techniques, such as ion implantation- and ion damage-based patterning and surface functionalization types of processes that have emerged as valuable additions to the nanofabrication toolkit and that are less widely known. While fabrication throughput, in general, is arguably low due to the serial nature of the direct-writing process, speed is not necessarily a problem in these IBL applications that work with small ion doses. Here we provide a comprehensive review of ion beam lithography in general and a practical guide to the individual IBL techniques developed to date. Special attention is given to applications in nanofabrication.

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“…10,17,18 In earlier work, we have demonstrated single ion impact detection in micrometer scale transistors. 10,17,18 In earlier work, we have demonstrated single ion impact detection in micrometer scale transistors.…”

Section: Devices For Spin Readout and Single Ion Impact Sensingmentioning

confidence: 99%

Improved single ion implantation with scanning probe alignment

Ilg

Weis

Schwartz

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Activation improvement of ion implanted boron in silicon through fluorine co-implantation J.Single dopant atoms can affect transport properties in scaled semiconductor devices and coherent control of spin and charge degrees of freedom of single dopant atoms promises to enable quantum computing. The authors report on an improved technique for deterministic placement of single dopant atoms by single ion implantation with scanning probe alignment. Ions are generated in a microwave driven ion source, mass analyzed in a Wien filter, and impinge on spin readout devices after alignment of the ion beam to regions of interest with a noncontact scanning force microscope.

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Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Cited by 16 publications

References 63 publications

Dopant-Based Charge Sensing Utilizing P-I-N Nanojunction

Dopant-Based Charge Sensing Utilizing P-I-N Nanojunction

Direct-Write Ion Beam Lithography

Improved single ion implantation with scanning probe alignment

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