2018
DOI: 10.1364/ome.8.003049
|View full text |Cite
|
Sign up to set email alerts
|

Single-layer active-passive Al2O3 photonic integration platform

Abstract: Amorphous Al 2 O 3 is an attractive platform for integrated photonics, providing active and passive functionalities. We have developed an integration procedure to create active and passive regions at the same level on one wafer. This fabrication process reduces the number of fabrication steps compared to vertical integration of two materials. The main advantage is that all structures are defined within a single photolithography and etching step and are therefore automatically aligned. As a proof of principle, … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
10
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 16 publications
(10 citation statements)
references
References 25 publications
(26 reference statements)
0
10
0
Order By: Relevance
“…36 The TeO 2 layer can be doped with rare earth ions by simultaneously sputtering from a rare earth target on an additional sputtering gun within the system during film deposition. 42,43 In this demonstration, we coat the entirety of the chip as no opto-electronic functionality is used, although in the future, a lift off or shadow masking process 48 could be used around the microcavity to prevent tellurite glass coating over metal contacts. An overview of the full fabrication process used in this design can be seen in Fig.…”
Section: Tellurium Oxide Microresonator Fabricationmentioning
confidence: 99%
“…36 The TeO 2 layer can be doped with rare earth ions by simultaneously sputtering from a rare earth target on an additional sputtering gun within the system during film deposition. 42,43 In this demonstration, we coat the entirety of the chip as no opto-electronic functionality is used, although in the future, a lift off or shadow masking process 48 could be used around the microcavity to prevent tellurite glass coating over metal contacts. An overview of the full fabrication process used in this design can be seen in Fig.…”
Section: Tellurium Oxide Microresonator Fabricationmentioning
confidence: 99%
“…A single-layer integration scheme has also been proposed and experimentally demonstrated for active on passive Al 2 O 3 integration [47]. The process is illustrated in Figure 7(a).…”
Section: Integration Of Rare-earth Ion Doped Al 2 O 3 Onto Si 3 Nmentioning
confidence: 99%
“…Given the subwavelength dimensions of plasmonic nano-antennas and considering the inverse relationship between the Raman scattering cross-section and wavelength used, 785 nm is one the most used wavelengths to perform this technique since it offers a compromise between performance and technological requirements. Integrated optical waveguides operating at this wavelength are often fabricated using dielectric materials, including silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ) [13], aluminum oxide (Al 2 O 3 ) [14,15] and titanium oxide (TiO 2 ) [16].…”
Section: Introductionmentioning
confidence: 99%