Single-Layer MoS<sub>2</sub>Phototransistors

Yin, Zongyou; Li, Hai; Li, Hong; Jiang, Lin; Shi, Yumeng; Sun, Yinghui; Lü, Gang; Zhang, Qing; Chen, Xiaodong; Zhang, Hua

doi:10.1021/nn2024557

Cited by 3,286 publications

(2,801 citation statements)

References 41 publications

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“…In addition, the lateral photovoltage balance values remain nearly constant for each laser power without depending on the chopper frequency, and V max increases gradually until becoming saturated with increasing laser power, as shown in Figure 4f, which is consistent with the LPE results. More importantly, it is noteworthy that the response time of this heterojunction is much faster than those of most reported MoS 2 ‐based photodetectors 10, 11, 12, 30, 59, 60, 61, 62, 63. Though ultrafast and stable photoresponse with no degradation, as well as resistance capacitance (RC)‐limited bandwidth, of the optoelectric devices is one of the basic requirements for applications in high‐speed optical communications, until now, the frequency of the modulated laser has been lower than 4000 Hz in most of the previously reported nano‐PDs, which will hinder their application in dynamic real‐time detection of the optical signal.…”

Section: Resultsmentioning

confidence: 86%

“…Among various 2D materials, MoS 2 has shown excellent properties in optoelectronic applications due to its suitable band gap value,5, 6 relatively high carrier mobility,2, 7 high light absorbance,3, 8 and, more importantly, good stability,9, 10 and brilliant optoelectronic properties 1, 7, 11, 12. However, pure MoS 2 ‐based optoelectronic devices are usually limited to infrared light detection and lower photoelectric conversion efficiency (PCE) because of the direct band gap of 1.8 eV for single‐layered MoS 2 sheet5, 6 and the picosecond ultrashort carrier lifetime 13, 14.…”

Section: Introductionmentioning

confidence: 99%

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Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS₂/Si Heterojunction

et al. 2017

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MoS2, as a typical transition metal dichalcogenide, has attracted great interest because of its distinctive electronic, optical, and catalytic properties. However, its advantages of strong light absorption and fast intralayer mobility cannot be well developed in the usual reported monolayer/few‐layer structures, which make the performances of MoS2‐based devices undesirable. Here, large‐area, high‐quality, and vertically oriented few‐layer MoS2 (V‐MoS2) nanosheets are prepared by chemical vapor deposition and successfully transferred onto an Si substrate to form the V‐MoS2/Si heterojunction. Because of the strong light absorption and the fast carrier transport speed of the V‐MoS2 nanosheets, as well as the strong built‐in electric field at the interface of V‐MoS2 and Si, lateral photovoltaic effect (LPE) measurements suggest that the V‐MoS2/Si heterojunction is a self‐powered, high‐performance position sensitive detector (PSD). The PSD demonstrates ultrahigh position sensitivity over a wide spectrum, ranging from 350 to 1100 nm, with position sensitivity up to 401.1 mV mm−1, and shows an ultrafast response speed of 16 ns with excellent stability and reproducibility. Moreover, considering the special carrier transport process in LPE, for the first time, the intralayer and the interlayer transport times in V‐MoS2 are obtained experimentally as 5 and 11 ns, respectively.

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Section: Resultsmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS₂/Si Heterojunction

et al. 2017

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“…Other layered materials such as BN (refs 1,12,29) and oxide nanosheets 10,38 can also be mechanically exfoliated into single sheets by this method. Mechanical cleavage produces single-crystal flakes of high purity and cleanliness that are suitable for fundamental characterization [30][31][32][33] and for fabrication of individual devices 11,31,32,34,35,[39][40][41] . This method is not scalable, however, and does not allow systematic control of flake thickness and size.…”

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confidence: 99%

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

et al. 2012

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699M any two-dimensional (2D) materials exist in bulk form as stacks of strongly bonded layers with weak interlayer attraction, allowing exfoliation into individual, atomically thin layers 1 . The form receiving the most attention today is graphene, the monolayer counterpart of graphite. The electronic band structure of graphene has a linear dispersion near the K point, and charge carriers can be described as massless Dirac fermions, providing scientists with an abundance of new physics 2,3 . Graphene is a unique example of an extremely thin electrical and thermal conductor 4 , with high carrier mobility 5 , and surprising molecular barrier properties 6,7 .Many other 2D materials are known, such as the TMDCs 8,9 , transition metal oxides including titania-and perovskite-based oxides 10,11 , and graphene analogues such as boron nitride (BN) 12,13 . In particular, TMDCs show a wide range of electronic, optical, mechanical, chemical and thermal properties that have been studied by researchers for decades 9,14,15 . There is at present a resurgence of scientific and engineering interest in TMDCs in their atomically thin 2D forms because of recent advances in sample preparation, optical detection, transfer and manipulation of 2D materials, and physical understanding of 2D materials learned from graphene.The 2D exfoliated versions of TMDCs offer properties that are complementary to yet distinct from those in graphene. Graphene displays an exceptionally high carrier mobility exceeding 10 6 cm 2 V -1 s -1 at 2 K (ref. 16) and exceeding 10 5 cm 2 V -1 s -1 at room temperature for devices encapsulated in BN dielectric layers 5 ; because pristine graphene lacks a bandgap, however, fieldeffect transistors (FETs) made from graphene cannot be effectively switched off and have low on/off switching ratios. Bandgaps can be engineered in graphene using nanostructuring [17][18][19] , chemical functionalization 20 and applying a high electric field to bilayer graphene 21 , but these methods add complexity and diminish mobility. In contrast, several 2D TMDCs possess sizable bandgaps around 1-2 eV (refs 9,14), promising interesting new FET and optoelectronic devices.TMDCs are a class of materials with the formula MX 2 , where M is a transition metal element from group IV (Ti, Zr, Hf and so on), group V (for instance V, Nb or Ta) or group VI (Mo, W and so on), and X is a chalcogen (S, Se or Te). These materials form layered structures of the form X-M-X, with the chalcogen atoms in two hexagonal planes separated by a plane of metal atoms, as shown in Fig. 1a. Adjacent layers are weakly held together to form the bulk crystal in a variety of polytypes, which vary in stacking orders and metal atom coordination, as shown in Fig. 1e. The overall symmetry of TMDCs is hexagonal or rhombohedral, and the metal atoms have octahedral or trigonal prismatic coordination. The electronic properties of TMDCs range from metallic to semiconducting, as summarized in Table 1. There are also TMDCs that exhibit exotic behaviours such as charge density waves ...

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“…[1][2][3][4][5] However, over the last few years, it has become clear that a range of other inorganic layered compounds can be mechanically exfoliated in small quantities to give 2-dimensional nanosheets with interesting properties. [6][7][8][9][10] For example, exfoliated hexagonal boron nitride has been used as a dielectric support in graphene-based transistors 11 while MoS 2 has been fabricated into sensors 10,12 , transistors [13][14][15] and integrated circuits. 16 The availability of a wide range of 2-dimensional materials is important as it allows access to a broad palette of physical and chemical properties.…”

Section: Toc Figmentioning

confidence: 99%

Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersibility of Exfoliated Nanosheets Varies Only Weakly between Compounds

et al. 2012

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Abstract:We have studied the dispersion and exfoliation of four inorganic layered compounds, WS 2 , We found that the dispersed concentration of each material falls exponentially with  as predicted by solution thermodynamics. This work shows that solution thermodynamics and specifically solubility parameter analysis can be used as a framework to understand the dispersion of 2-dimensional materials. Finally, we note that in good solvents such as 2 cyclohexylpyrrolidone, the dispersions are temporally stable with >90% of material remaining dispersed after 100 hours. ToC figOver the last decade, 2-dimensional nanomaterials have become one of the most studied subfields of nanoscience. These developments have been spearheaded by research into graphene, a material that is unique due to its combination of thermal, electronic, optical and mechanical properties. 1-5 However, over the last few years, it has become clear that a range of other inorganic layered compounds can be mechanically exfoliated in small quantities to give 2-dimensional nanosheets with interesting properties. 6-10 For example, exfoliated hexagonal boron nitride has been used as a dielectric support in graphene-based transistors 11 while MoS 2 has been fabricated into sensors 10, 12 , transistors 13-15 and integrated circuits. 16 The availability of a wide range of 2-dimensional materials is important as it allows access to a broad palette of physical and chemical properties. A good example is provided by the family of transition metal dichalcogenides (TMDs). These materials have the chemical composition MX 2 where M is a transition metal (commonly, but not limited to Ti, Nb, Ta, Mo, W) and X is a chalcogen (i.e. S, Se, Te). As in graphite, these atoms are covalently bonded into nanosheets which stack into 3-dimensional crystals by van der Waals interactions. These materials are of particular interest because, depending on the combination of metal and chalcogen, the material can be semiconducting or metallic. 17 In addition, the bandgap can vary from a few hundred meV to a few eV, 17 suggesting these materials have potential as versatile electronic device materials.Furthermore, these materials have interesting electrochemical properties which make them suitable for applications such as battery electrodes. 18,19 As with graphene, many applications will require relatively large quantities of material suggesting that a solution processing route is required. 20 A number of possibilities exist. For example, it has been known for many years that materials such as MoS 2 can be exfoliated by 3 lithium intercalation. 21 However, such a route tends to result in structural deformations in some TMDs leading to considerably altered electronic properties. 22 Alternatively, TMDs can be synthesised in the liquid phase. 7,8 Probably the simplest route to liquid exfoliation of layered compounds is sonication assisted exfoliation in solvents [23][24][25][26][27][28][29] or aqueous surfactant solutions. 19,[30][31][32] Here, sonication results in the exfoliation of the ...

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Single-Layer MoS₂Phototransistors

Cited by 3,286 publications

References 41 publications

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS₂/Si Heterojunction

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS₂/Si Heterojunction

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersibility of Exfoliated Nanosheets Varies Only Weakly between Compounds

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Single-Layer MoS2Phototransistors

Cited by 3,286 publications

References 41 publications

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS2/Si Heterojunction

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS2/Si Heterojunction

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersibility of Exfoliated Nanosheets Varies Only Weakly between Compounds

Contact Info

Product

Resources

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Single-Layer MoS₂Phototransistors

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS₂/Si Heterojunction

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS₂/Si Heterojunction