2017
DOI: 10.1002/advs.201700502
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Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS2/Si Heterojunction

Abstract: MoS2, as a typical transition metal dichalcogenide, has attracted great interest because of its distinctive electronic, optical, and catalytic properties. However, its advantages of strong light absorption and fast intralayer mobility cannot be well developed in the usual reported monolayer/few‐layer structures, which make the performances of MoS2‐based devices undesirable. Here, large‐area, high‐quality, and vertically oriented few‐layer MoS2 (V‐MoS2) nanosheets are prepared by chemical vapor deposition and s… Show more

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Cited by 102 publications
(76 citation statements)
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“…The high performance is because the photogenerated carriers can be not only effectively separated in the MoS 2 /p‐Si heterojunction but also easily transported in Si and the vertically standing layered MoS 2 layer, as shown in Figure B. Moreover, Wang et al further fabricated vertically standing few‐layer MoS 2 /p‐Si heterojunctions with a fast response time of approximately 16 ns at zero bias . Das and coworkers boosted the detection performance of a MoS 2 /porous Si heterojunction‐based photodetector by virtue of its large junction area, excellent light trapping properties, and high interfacial barrier height .…”
Section: D Thin Film/si Heterostructurementioning
confidence: 99%
See 1 more Smart Citation
“…The high performance is because the photogenerated carriers can be not only effectively separated in the MoS 2 /p‐Si heterojunction but also easily transported in Si and the vertically standing layered MoS 2 layer, as shown in Figure B. Moreover, Wang et al further fabricated vertically standing few‐layer MoS 2 /p‐Si heterojunctions with a fast response time of approximately 16 ns at zero bias . Das and coworkers boosted the detection performance of a MoS 2 /porous Si heterojunction‐based photodetector by virtue of its large junction area, excellent light trapping properties, and high interfacial barrier height .…”
Section: D Thin Film/si Heterostructurementioning
confidence: 99%
“…Moreover, Wang et al further fabricated vertically standing few-layer MoS 2 /p-Si heterojunctions with a fast response time of approximately 16 ns at zero bias. 92 Das and coworkers boosted the detection performance of a MoS 2 /porous Si heterojunction-based photodetector by virtue of its large junction area, excellent light trapping properties, and high interfacial barrier height. 93 The photodetector exhibited an ultrahigh detectivity of approximately 10 14 Jones, small rise/fall times of 9/7 μs, and a maximum responsivity of 9 A W −1 in the range from 550 to 850 nm.…”
Section: Inorganic Semiconductor/simentioning
confidence: 99%
“…Equation means that the number of e–h pairs generated are proportional to P at constant λ and also proportional to incident λ at constant P . We further note that when the photon energy hν is equal to or near the band gap E g , the exciting or quantum efficiency is relatively high . We also note that S , R λ , EQE, and D* are directly proportional to the photogenerated current, i.e., number of e–h pairs generated (Equations –(12)).…”
Section: Resultsmentioning
confidence: 89%
“…Compared with bare Si substrates, SiO 2 /Si substrates can supply much smoother surface for crystal growth, which brings a higher uniformity at the interface. This variation of interface will result in a change of the growth pattern of MoS 2 , which has been reported to impact greatly on the photoelectric properties . Usually, (001) plane of MoS 2 is a stable state and parallel to the substrate surface, while (100) plane is a metastable state and perpendicular to the substrate surface .…”
Section: Lateral Photovoltaic Effectmentioning
confidence: 99%